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An Epitaxial Regrowth of Polysilicon to Single Crystal Silicon By H2 Annealing Process

Published online by Cambridge University Press:  21 February 2011

Yuichi Hirofuji ,
Noboru Nomura  and
Koichi Kugimiya
Yuichi Hirofuji
Affiliation:
Central Research Laboratory, Matsushita Electric Ind. Co., Ltd. 3–15 Yagumo-Nakamachi, Moriguchi-Shi, Osaka, 570 Japan
Noboru Nomura
Affiliation:
Central Research Laboratory, Matsushita Electric Ind. Co., Ltd. 3–15 Yagumo-Nakamachi, Moriguchi-Shi, Osaka, 570 Japan
Koichi Kugimiya
Affiliation:
Central Research Laboratory, Matsushita Electric Ind. Co., Ltd. 3–15 Yagumo-Nakamachi, Moriguchi-Shi, Osaka, 570 Japan
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Abstract

Si epitaxial regrowth was realized through the thick interfacial oxide films of up to 2 nm by H2 annealing. The epitaxy took place in an anomorous region when the oxide was reduced to about a half of its initial peak height, indicating that about a half of the interfacial oxide films in areawise was completely reduced. In this region, redis-tribution or diffusion of super-saturated oxygen was also observed.

A schematic model of the epitaxial regrowth by H2 annealing is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 187
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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