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An Atomic Force Microscopy Study of the Initial Nucleation of GaN on Sapphire
Published online by Cambridge University Press: 21 February 2011
Abstract
Preliminary results of a study of GaN nucleation and growth by molecular beam epitaxy using a nitrogen rf plasma source are presented. Nucleation layers and 3000 Å thick layers were investigated by atomic force microscopy and x-ray diffraction. Growth under gallium-rich conditions both increased nucleation island size and promoted two-dimensional growth.
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- Copyright © Materials Research Society 1996
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