Hostname: page-component-7c8c6479df-995ml Total loading time: 0 Render date: 2024-03-28T14:19:20.237Z Has data issue: false hasContentIssue false

An Amorphous Silicon Alloy Triple-Junction Solar Cell with 14.6% Initial and 13.0% Stable Efficiencies

Published online by Cambridge University Press:  15 February 2011

J. Yang
Affiliation:
United Solar Systems Corp., 1100 W.Maple Rd., Troy, MI 48084
A. Banerjee
Affiliation:
United Solar Systems Corp., 1100 W.Maple Rd., Troy, MI 48084
S. Guha
Affiliation:
United Solar Systems Corp., 1100 W.Maple Rd., Troy, MI 48084
Get access

Abstract

An initial conversion efficiency of 14.6% has been achieved using amorphous silicon-based alloy in a spectrum splitting triple-junction structure. After 1000 hours of indoor one-sun light soaking at 50 °C, the stabilized efficiency is 13.0%. Both efficiencies are the highest reported to date for amorphous silicon alloy solar cells and have been independently confirmed by the National Renewable Energy Laboratory. The device was deposited onto a stainless steel substrate coated with textured silver/zinc oxide back reflector. The bottom and middle cells use amorphous silicon-germanium alloys, employing high hydrogen dilution in the gas mixture and bandgap profiling in the cell design. The top cell uses amorphous silicon alloy with high hydrogen dilution. Key factors leading to the achievement include a) improvement of the bottom cell that exhibits an AM1.5 efficiency of 10.4% and quantum efficiency of 45% at 850 nm; b) improvement of the tunnel junctions between the component cells by incorporating a novel multilayered structure with microcrystalline p and n layers; and c) improvement of transparent conductive oxide for enhancing the short wavelength response of the top cell.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., Ovshinsky, S.R., Izu, M., Ovshinsky, H.C., and Deng, X., Mat. Res. Soc. Symp. Proc., 645 (1994).Google Scholar
2. Luft, W., Branz, H.M., Dalai, V.L., Hegedus, S.S., and Schiff, E.A., AIP Conference Proceedings 306, 31 (1993).Google Scholar
3. Yang, J., Xu, X., Banerjee, A., and Guha, S., 25th IEEE PVSC Proc., 1041 (1996).Google Scholar
4. Ross, R., Mohr, R., Fournier, J., and Yang, J., 19th IEEE PVSC Proc., 327 (1987).Google Scholar
5. Yang, J., Banerjee, A., Glatfelter, T., Hoffman, K., Xu, X., and Guha, S., First World Conference on Photovoltaic Energy Conversion, 380, (1994).Google Scholar
6. Guha, S., Yang, J., Pawlikiewicz, A., Glatfelter, T., Ross, R., and Ovshinsky, S.R., Appl. Phys. Lett. 54, 2330 (1989).Google Scholar
7. Guha, S., Yang, J., Nath, P., and Hack, M., Appl. Phys, Lett. 49, 218 (1986).Google Scholar
8. Xu, X., Yang, J., Banerjee, A., Guha, S., Vasanth, J, and Wagner, S., Appl. Phys. Lett. 67, 2323 (1995).Google Scholar