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Amphoteric Behaviour of Ge in InP: A RBS/Channeling and Differential Hall/Resistivity Study

Published online by Cambridge University Press:  26 February 2011

P. Kringhøj
P. Kringhøj*
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus, Denmark
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Abstract

The lattice location of ion implanted Ga, Ge, and Se in InP has been determined with a combined RBS/channeling-PIXE technique and correlated to the carrier concentration and mobility profiles obtained with differential Hall/resistivity measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 841
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Asiles, M. G., Smith, F. G. H., and Williams, E. W., J. Electrochem. Soc. 120, 1750 (1973).CrossRefGoogle Scholar
2. Rao, M. V. and Thompson, P. E., Appl. Phys. Lett. 50, 1444 (1987).CrossRefGoogle Scholar
3. Tell, B., Brown-Goebeler, K. F., and Cheng, C. L., Appl. Phys. Lett. 52, 299 (1988).CrossRefGoogle Scholar
4. Rosztoczy, F. E., Antypas, G. A., and Casau, C. G., Symposium on GaAs, Aachen (Institute of Physics, Aachen, 1970), p. 86 Google Scholar
5. Kringhøj, P., Gribkovskii, V. V., and Nylandsted Larsen, A., Appl. Phys. Lett. 57, 1514 (1990).CrossRefGoogle Scholar
6. Pomrenke, G. S., J. Crystal Growth 64, 158 (1983).CrossRefGoogle Scholar
7. Kirillov, D., Merz, J. L., Kalish, R., and Shatas, S., J. Appl. Phys. 57, 531 (1985).CrossRefGoogle Scholar
8. Skolnick, M. S., Dean, P. J., Taylor, L. L., and Anderson, D. A., Najda, S. P., Armistead, C. J., and Stradling, R. A., Appl. Phys. Lett. 44, 881 (1984).Google Scholar
9. Sun, S. W. and Wessels, B. W., J. Appl. Phys. 68, 606 (1990).CrossRefGoogle Scholar
10. Walukiewicz, W., Lagowski, J., Jastrzebski, L., Rava, P., Lichtensteiger, M., Gatos, C. H., and Gatos, H. C., J. Appl. Phys. 51, 2659 (1980).CrossRefGoogle Scholar
11. Neuman, H. and Jacobs, B., Phys. Stat. Sol. (a), 42, K139 (1978).CrossRefGoogle Scholar
12. Lindhard, J., Dan, K.. Vidensk. Selsk. Medd. 34, No 14 (1965).Google Scholar
13. Xiao, G. F., Hashimoto, S., Gibson, W. M., and Pearton, S. J., Nucl. Instrum. Methods b45, 464 (1990).CrossRefGoogle Scholar