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Amorphous to Crystalline Phase Transformations in High Dose Ion Implanted Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
Crystallization processes during thermal annealing have been studied for a number of group III, IV and V impurities implanted into amorphous Si. At high impurity concentrations, an amorphous to polycrystalline transformation is observed. For low solubility, low melting point species, this transformation is melt-mediated, whereas it can occur in the solid phase for other species such as Sb.
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