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Amorphous to Crystalline Phase Transformations in High Dose Ion Implanted Silicon

  • J.S. Williams (a1), R.P. Thornton (a2), R.G. Elliman (a2), Y.H. Li (a2) and A.P. Pogany (a2)...

Abstract

Crystallization processes during thermal annealing have been studied for a number of group III, IV and V impurities implanted into amorphous Si. At high impurity concentrations, an amorphous to polycrystalline transformation is observed. For low solubility, low melting point species, this transformation is melt-mediated, whereas it can occur in the solid phase for other species such as Sb.

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1 Poate, J.M. and Williams, J.S., in “ion Implantation and Beam Processing”, ed. Williams, J.S. and Poate, J.M. (Academic Press, Sydney, 1984) p. 13.
2 Suni, I., Goltz, G., Nicolet, M.A. and Lau, S.S., Appl.Phvs.Lett. 40, 269 (1982).
3 Jacobson, D.C., Poate, J.M. and Olson, G.L., Appl.Phvs.Lett. 48, 118 (1986).
4 Thornton, R.P., Elliman, R.G. and Williams, J.S., Nucl.Instr.Meth. B37/38, 387 (1989).
5 Nygren, E., Williams, J.S., Pogany, A.P., Elliman, R.G., Olson, G.L. and McCallum, J.C., Mat.Res.Soc.Symp.Proc. 74, 307 (1987).
6 Nygren, E., McCallum, J.C., Thornton, R.P., Williams, J.S. and Olson, G.L., Mat.Res.Soc.Symp.Proc. 100, 406 (1988).
7 Thornton, R.P., Elliman, R.G. and Williams, J.S., J.Mat.Res. (in press).
8 Olson, G.L. and Roth, J.A., Mat.Sci.Rev. 3, 1 (1988).
9 Jacobson, D.C., Ph.D. thesis, Stevens University of Technology, New Jersey (1988).
10 Pennycook, S.J., Culbertson, R.J. and Berger, S.D., Mat.Res.Soc.Symp.Proc. 100, 411 (1988).
11 Thornton, R.P., Li, Y.H., Elliman, R.G., Nygren, E., McCallum, J.C., Brown, R.A. and Williams, J.S., to be published.

Amorphous to Crystalline Phase Transformations in High Dose Ion Implanted Silicon

  • J.S. Williams (a1), R.P. Thornton (a2), R.G. Elliman (a2), Y.H. Li (a2) and A.P. Pogany (a2)...

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