Skip to main content Accessibility help

Amorphous Silicon Based TFT and MIS Nonvolatile Memories

  • Yue Kuo (a1) and Helinda Nominanda (a2)


The amorphous silicon (a-Si:H) TFT and MIS capacitor, which include an a-Si:H layer embedded in the silicon nitride gate dielectric layer, have been prepared and characterized for memory functions. Large shifts of the threshold voltage and flat band voltage were detected in the current-voltage and capacitance-voltage hysteresis measurements. The embedded a-Si:H film functioned as a charge retention medium that stores and releases injected carriers. The devices memory capacity varied with the thickness of the embedded a-Si:H layer and the sweep voltage. These low-cost memory devices can be used in many low-temperature prepared circuits.



Hide All
1 Kuo, Y. in “Non-LCD Applications of a-Si:H TFTs,” Thin Film Transistors, Materials and Processes, Volume 1: Amorphous Silicon Thin Film Transistors, ed. Kuo, Y. (Kluwer, 2004) pp. 485503.
2 Kuo, Y. and Nominanda, H., Appl. Phys. Lett. 89, 173503 (2006).
3 Nominanda, H. and Kuo, Y. in Non-volatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure, ed. Kuo, Y. (Electrochem. Soc. Trans., TFT Tech. 8, Vol. 13(8), Pennington, NJ, 2006, pp. 333339.
4 Burns, S. G., Shanks, H. R., Constant, A. P., Grubber, C., Schmidt, D., Landin, A., Thielen, C., Olympie, F., Schumacher, T., and Cobbs, J., Design and Fabrication of α-Si:H-Based EEPROM Cells, ed. Kuo, Y. (Electrom. Soc. Proc. PV 1994-1935 1994) pp. 370380.
5 Kuo, Y., J. Electrochem. Soc. 138, 637 (1991).
6 Kuo, Y. and Lee, S., Appl. Phys. Lett. 78, 1002 (2001).
7 Hillard, R. J., Heddleson, J. M., Zier, D. A., Rai-Choudhury, P., and Schroder, D. K., Diagnosis Techniques for Semiconductor Materials and Devices, Benton, J. L., Maracas, G. N., and Rai-Choudhury, P., Eds, Pennington, NJ: Electrochem. Soc., p. 261, 1992.
8 Nicollian, E. H and Brews, J. R., MOS (Metal Oxide Semiconductor), Physics and Technology, Ch. 5 & 10, New Jersey: Wiley-Interscience, 2003.
9 Sze, S. M., Physics Semiconductor Devices, p. 4. 98, New York: John Wiley & Sons, 1981.
10 Yang, K. J., King, T.-J., Hu, C., Levy, S., Al-Shareef, H. N., Solid-Sta. Elec. 47, 149 (2003).
11 Hiranaka, K., Yoshimura, T., and Yamaguchi, T., J. Appl. Phys. 62, 2129 (1987).
12 Harbison, J. P., Williams, A. J., and Lang, D.V., J. Appl. Phys. 55, 946 (1984).
13 Hiranaka, K. and Yamaguchi, T., Jpn. J. Appl. Phys. 29, 229 (1990).
14 Danesh, P. and Pantchev, B., Semicond. Sci. Technol. 15, 971 (2000).



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed