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Amorphous Silicon and Silicon Germanium Alloy Solar Cells Deposited by VHF at High Rates

Published online by Cambridge University Press:  17 March 2011

Jeffrey Yang ,
Baojie Yan ,
Jozef Smeets  and
Subhendu Guha
Jeffrey Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
Baojie Yan
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
Jozef Smeets
Affiliation:
N.V. Bekaert S.A., Bekaertstraat, 2, B-8550 Zwevegem, Belgium
Subhendu Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, Michigan 48084
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Abstract

A modified very high frequency (MVHF) glow discharge technique is used to deposit amorphous silicon (a-Si) and amorphous silicon-germanium (a-SiGe) alloy solar cells at high deposition rates. High quality a-Si alloy solar cells have been obtained by using MVHF at deposition rates up to ∼10 Å/s. The cells show good initial and stabilized efficiencies comparable to those obtained from conventional radio-frequency (RF) glow discharge deposition at low rates (∼1 Å/s). However, high quality a-SiGe alloy solar cells are more difficult to achieve at high deposition rates. In this paper, we present the progress made on a-SiGe alloy solar cells by incorporating bandgap profiling and appropriate buffer layers. Using the improved a-SiGe alloy solar cells, a-Si/a-SiGe tandem configurations are made and results presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A11.3
Copyright
Copyright © Materials Research Society 2001

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References

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