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Amorphous Si:H Linear Image Sensor Operated by a-Si:H TFT Array

Published online by Cambridge University Press:  21 February 2011

F. Okumura  and
S. Kaneko
F. Okumura
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyamae-ku, Kawasaki 213, Japan
S. Kaneko
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyamae-ku, Kawasaki 213, Japan
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Abstract

An amorphous Si:H linear image sensor operated by a-Si:H TFT array has been proposed. This sensor consists of photodiode array, TFT array, matrix circuit, charge transfer capacitor, and external circuit. Mobility for TFT is 0.6 cm2/V.s and 5 μsec/bit read out time was obtained in the conventional matrix mode scanning. Moreover, a novel driving method is applied in order to improve the effective operation speed and an investigation for TFT noise was performed. Experimental data confirm the validity of the concept.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 275
Copyright
Copyright © Materials Research Society 1984

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References

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