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Amorphous Hydrogenated Silicon Thin film Transistors Manufactured by a Photo-CVD Technique

Published online by Cambridge University Press:  26 February 2011

Stephen D. Baker ,
W. I. Milne  and
P. A. Robertson
Stephen D. Baker
Affiliation:
Cambridge University Engineering Department, Trumpington St, Cambridge, CB2 1PZ, UK
W. I. Milne
Affiliation:
Cambridge University Engineering Department, Trumpington St, Cambridge, CB2 1PZ, UK
P. A. Robertson
Affiliation:
Cambridge University Engineering Department, Trumpington St, Cambridge, CB2 1PZ, UK
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Abstract

In this paper we report on the production of thin film transistors using a novel photo-enhanced chemical vapour deposition process. Both the active layer, amorphous silicon, and the gate dielectric, silicon dioxide, have been deposited using a windowless internal lamp deposition system, from silane and silane:nitrous oxide gas mixtures, respectively. Using this technique we eliminate some of the problems of conventional photo-CVD. We report on the material properties and the manufacture and characteristics of large scale (0.5 mm2) TFT test structures. For these structures we obtain a threshold voltage of 25 V and a field effect mobility of 0.07 cm2/V/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 261
Copyright
Copyright © Materials Research Society 1988

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References

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