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Amorphous Carbon as a Diffusion Barrier to Copper

  • Richard G. Purser (a1), Jay W. Strane (a1) and James W. Mayer (a1)

Abstract

Amorphous carbon was evaluated as a diffusion barrier between Cu and Si. Samples were annealed at 500 ºC for 1 hour in vacuum. Barrier properties were characterized for metallurgical failure with RBS and XTEM, and electrical properties were characterized with pn junction diodes and MOS capacitors. RBS and X-TEM showed that a barrier 13.5 nm thick prevented Cu and Si diffusion during the anneal. The diodes remained rectifying after annealing, although the series resistance went up. C-V measurements of the capacitors did not show the hysteresis that is typical of mobile charge in the oxide. The barrier breakdown mechanism is diffusion through the amorphous structure.

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Amorphous Carbon as a Diffusion Barrier to Copper

  • Richard G. Purser (a1), Jay W. Strane (a1) and James W. Mayer (a1)

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