Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-17T14:49:56.920Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Carbon as a Diffusion Barrier to Copper

Published online by Cambridge University Press:  21 February 2011

Richard G. Purser ,
Jay W. Strane  and
James W. Mayer
Richard G. Purser
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Jay W. Strane
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
James W. Mayer
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Get access

Abstract

Amorphous carbon was evaluated as a diffusion barrier between Cu and Si. Samples were annealed at 500 ºC for 1 hour in vacuum. Barrier properties were characterized for metallurgical failure with RBS and XTEM, and electrical properties were characterized with pn junction diodes and MOS capacitors. RBS and X-TEM showed that a barrier 13.5 nm thick prevented Cu and Si diffusion during the anneal. The diodes remained rectifying after annealing, although the series resistance went up. C-V measurements of the capacitors did not show the hysteresis that is typical of mobile charge in the oxide. The barrier breakdown mechanism is diffusion through the amorphous structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 481
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. , Ashcroft and , Mermin, Solid State Physics, Saunders, Philadelphia, 8, 1976.Google Scholar
2. Wang, S. Q. et al. , J. Appl. Phys., 73(5), 2301, 1 March 1993.CrossRefGoogle Scholar
3. , Ashcroft and , Mermin, Solid State Physics, Saunders, Philadelphia, 304, 1976.Google Scholar
4. Porkolab, G. A. and Wolf, E. D., J. Vac. Sci. Tech. B, 10(6), 2681, Nov/Dec, 1992.CrossRefGoogle Scholar
5. Porkolab, G. A. and Wolf, E. D., Appl. Phys. Lett., 61(17), 2045, 26 Oct. 1992.CrossRefGoogle Scholar
6. Ward, W. J. and Carroll, K. M., J. Electrochemical Society, 129(1), 228, January, 1982.Google Scholar
7. Schroeder, D., Semiconductor Material and Device Characterization, Wiley, New York, 260–262, 1990.Google Scholar