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Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Mist CVD in Open-Air Atmosphere

  • Toshiyuki Kawaharamura (a1), Takayuki Uchida (a2), Kenji Shibayama (a2), Shizuo Fujita (a3), Takahiro Hiramatsu (a4) and Hiroyuki Orita (a4)...

Abstract

The surface passivation of Si wafer by AlO x thin films grown by mist CVD in an open-air atmosphere was studied with a view to improving the effect of high-performance c-Si solar cells. In AlO x thin film grown at a temperature above 400°C by mist CVD, the OH bonding did not remain in the film and the breakdown field (E BD) was over 6 MV/cm. In Si wafers passivated by AlO x thin films grown by mist CVD at growth temperature above 400°C, the negative fixed charge density (Q f) at the interface was higher than 1012 cm-2 and the surface recombination velocity (S eff) was 44.4 cm/s. These results show that mist CVD, which is fundamentally an environmentally friendly technique, may be suitable for the fabrication of a passivation film on Si surfaces designed to improve the effect of high-performance c-Si solar cells.

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1. Aberle, A.G., Prog. Photovolt, Res. Appl. 8, 473 (2000).10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D
2. Miyajima, S., Irikawa, J., Yamada, A., and Konagai, M., J. Appl. Phys. 109, 054507 (2011).10.1063/1.3552888
3. Miyajima, S., J. Plasma Fusion Res. 85, 820 (2009) [in Japanese].
4. Agostinelli, G., Delabie, A., Vitanov, P., Alexieva, Z., Dekkers, H. F. W., De Wolf, S., and Beaucarne, G., Sol. Energy Mater. Sol. Cells 90, 3438 (2006).10.1016/j.solmat.2006.04.014
5. Voigt, M. and Sokolowski, M., Mater. Sci. Eng. B 109, 99 (2004).10.1016/j.mseb.2003.10.056
6. Andersson, J. M., Wallin, E., Helmersson, U., Kreissig, U., and Munger, E P., Thin Solid Films 513, 57 (2006).10.1016/j.tsf.2006.01.016
7. Smit, M K., Acket, G.A., and Laan, C.J.V.D., Thin Solid Films 138, 171 (1986).10.1016/0040-6090(86)90391-3
8. Nowicki, R.S., J. Vac. Sci. Technol. 14, 127 (1997).10.1116/1.569103
9. Este, G., Westwood, W.D., J. Vac. Sci. Technol. A 2, 1238 (1984).10.1116/1.572502
10. Li, T.-T. and Cuevas, A., Phys. Stat. Sol. RRL 3, 160 (2009).10.1002/pssr.200903140
11. Frigo, D.M., van Eijden, G.J. M., Reuvers, P.J., and Smit, C.J., Chem. Mater. 6, 190 (1994).10.1021/cm00038a015
12. Chryssou, C.E. and Pitt, C.W., Appl. Phys. A 65, 469 (1997).10.1007/s003390050611
13. Miyajima, S., Irikawa, J., Yamada, A., and Konagai, M., Appl. Phys. Express 3, 012301 (2010).10.1143/APEX.3.012301
14. Wu, S.Y., Hong, M., Kortan, A.R., Kwo, J., Mannaerts, J.P., Lee, W.C., and Huang, Y.L., Appl. Phys. Lett. 87, 091908 (2005).10.1063/1.2037205
15. Kim, J., Song, J., Kwon, O., Kim, S., Hwang, C.S., Park, S.-H., Yun, S.J., Jeong, J., and Hyun, K.S., Appl. Phys. Lett. 80, 2734 (2002).10.1063/1.1468916
16. Suntola, T., “Atomic Layer Epitaxy” in Handbook of Crystal Growth 3, Thin Films and Epitaxy Part B, Growth Mechanism and Dynamics, Chapter 14, Elsevier, (1994) p.601.
17. Huang, M.L., Chang, Y.C., Chang, C.H., Lee, Y.J., Chang, P., Kwo, J., Wu, T.B., and Hong, M., Appl. Phys. Lett. 87, 252104 (2005).10.1063/1.2146060
18. Yun, S.J., Kang, J.S., Paek, M.C., and Nam, K.-S., J. Kor. Phys. Soc. 33, S170 (1998).
19. Groner, M.D., Fabreguette, F.H., Elam, J.W., and, George, S.M., Chem. Mater. 16, 639 (2004).10.1021/cm0304546
20. Hoex, B., Heil, S.B.S., Langereis, E., van de Sanden, M.C.M., and Kessels, W.M.M., Appl. Phys. Lett. 89, 042112 (2006).10.1063/1.2240736
21. Hoex, B., Schmidt, J., Bock, R., Altermatt, P.P., van de Sanden, M.C.M., and Kessels, W.M.M., Appl. Phys. Lett. 91, 112107 (2007).10.1063/1.2784168
22. Schmidt, J., Merkle, A., Brendel, R., Hoex, B., van de Sanden, M.C.M., and Kessels, W.M.M., Prog. Photovolt: Res. Appl. 16, 461 (2008).10.1002/pip.823
23. Hoex, B., Schmidt, J., Pohl, P., van de Sanden, M.C.M., and Kessels, W.M.M., J. Appl. Phys. 104, 044903 (2008).10.1063/1.2963707
24. Rogojan, R., Andronescu, E., Ghitulica, C., and Vasile, B.S., U.P.B. Sci. Bull., Series B 73, 67 (2011).
25. Avis, C. and Jang, J., J. Mater. Chem. 21, 10649 (2011).10.1039/c1jm12227d
26. Shamala, K.S., Murthy, L.C.S., Radhakrishna, M.C., and Rao, K.N., Sens. Actuators A 135, 552 (2007).10.1016/j.sna.2006.10.004
27. Mendoza, J.G-., Hipolito, M.G-., Frutis, M.A-., and Falcony, C., J. Mater. Sci.: Mater. Electr. 15, 629 (2004).
28. Kawaharamura, T., Ph. D. Thesis, Faculty of Eng., Kyoto Univ., Kyoto (2008) [in Japanese].
29. Kawaharamura, T., Nishinaka, H., and Fujita, S., Jpn. J. Appl. Phys. 47, 4669 (2008).10.1143/JJAP.47.4669
30. Kamada, Y., Kawaharamura, T., Nishinaka, H., and Fujita, S., Jpn. J. Appl. Phys. 45, L857 (2006).10.1143/JJAP.45.L857
31. Lu, J.G., Kawaharamura, T., Nishinaka, H., Kamada, Y., Ohshima, T., and Fujita, S., J. Crystal Growth 29, 1 (2007).10.1016/j.jcrysgro.2006.10.251
32. Kawaharamura, T., Dang, G.T., and Furuta, M., Jpn. J. Appl. Phys. 51, 040207 (2012).
33. Kawaharamura, T., Mori, K., Orita, H., Shirahata, T., Fujita, S., and Hirao, T., Jpn. J. Appl. Phys. 52, 035501 (2013).10.7567/JJAP.52.035501
34. Piao, J., Katori, S., Kawaharamura, T., Li, C., and Fujita, S., Jpn. J. Appl. Phys. 54, 090201 (2012).10.7567/JJAP.51.090201
35. Furuta, M., Kawaharamura, T., Wang, D., Hirao, T., Toda, T., and Dang, G. T., IEEE Electron Devices Letters 33, 851 (2012).10.1109/LED.2012.2192902
36. Kawaharamura, T., Uchida, T., Wang, D., Sanada, M., and Furuta, M., Phys. Stat. Sol.(c), 10 1565 (2013).
37. Kawaharamura, T., Uchida, T., Sanada, M., and Furuta, M., AIP Advances 3, 032135 (2013).
38. Priya, G.K., Padmaja, P., Warrier, K.G.K., Damodaran, A.D., and Aruldhas, G., J. Mater. Sci. Lett. 16, 1584 (1997).10.1023/A:1018568418302
39. Sproul, A.B., J. Appl. Phys. 76, 2851 (1994).10.1063/1.357521
40. Hezel, R. and Jaeger, K., J. Electrochem. Soc. 136, 518 (1989).10.1149/1.2096673
41. Saint-Cast, P., Kania, D., Hofmann, M., Benick, J., Rentsch, J., and Preu, R., Appl. Phys. Lett. 95, 151502 (2009).10.1063/1.3250157

Keywords

Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Mist CVD in Open-Air Atmosphere

  • Toshiyuki Kawaharamura (a1), Takayuki Uchida (a2), Kenji Shibayama (a2), Shizuo Fujita (a3), Takahiro Hiramatsu (a4) and Hiroyuki Orita (a4)...

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