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Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

  • M. Okamoto (a1), T. Ogawa (a1), Y. Mori (a1) and T. Sasaki (a1)

Abstract

The smooth and highly oriented AlN films were obtained using pulsed laser deposition from sintered AlN target in a nitrogen ambient. The XRD investigation revealed that highly oriented AlN thin films along the c-axis (AlN (0002)) normal to the substrate were obtained both on Si(111) and on Si(100) substrates. The (0002) x-ray peak width became narrower with increasing substrate temperature. The CL investigation showed that AlN films at high laser energy density (Ed) indicated CL peak at shorter wavelength (306nm) than that at low Ed (394nm). N/Al atomic ratio in AlN films grown at high Ed also increased as comparison with the films grown at low Ed.

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