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Aluminum and Electron-Irradiation Induced Deep-Levels In N-Type And P-Type 6H-Sic

Published online by Cambridge University Press:  10 February 2011

Min Gong ,
C. D. Beling ,
S. Fung ,
G. Brauer ,
H. Wirth ,
W. Skorupa  and
Zhi-Pu You
Min Gong
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
G. Brauer
Affiliation:
Institut fur Jonenstrahliphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, D-01314 Dresden, Germany
H. Wirth
Affiliation:
Institut fur Jonenstrahliphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Institut fur Jonenstrahliphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, D-01314 Dresden, Germany
Zhi-Pu You
Affiliation:
Department of Physics, Sichuan University, Chengdu, Sichuan 610064, P. R. China
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Abstract

Two deep levels, located at Ev+0.26eV and Ec-0.44eV, in Al-implanted n-type samples and one at Ev+0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e) irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 455
Copyright
Copyright © Materials Research Society 1998

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