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Aluminum and Electron-Irradiation Induced Deep-Levels In N-Type And P-Type 6H-Sic

  • Min Gong (a1), C. D. Beling (a1), S. Fung (a1), G. Brauer (a2), H. Wirth (a2), W. Skorupa (a2) and Zhi-Pu You (a3)...

Abstract

Two deep levels, located at Ev+0.26eV and Ec-0.44eV, in Al-implanted n-type samples and one at Ev+0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e) irradiation.

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Aluminum and Electron-Irradiation Induced Deep-Levels In N-Type And P-Type 6H-Sic

  • Min Gong (a1), C. D. Beling (a1), S. Fung (a1), G. Brauer (a2), H. Wirth (a2), W. Skorupa (a2) and Zhi-Pu You (a3)...

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