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AlON thin films formed by ECR plasma oxidation for high-k gate insulator application

Published online by Cambridge University Press:  01 February 2011

Go Yamanaka ,
Takafumi Uchikawa ,
Shun-ichiro Ohmi  and
Tetsushi Sakai
Go Yamanaka
Affiliation:
Department of Information Processing, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Takafumi Uchikawa
Affiliation:
Department of Information Processing, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Shun-ichiro Ohmi
Affiliation:
Department of Information Processing, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Tetsushi Sakai
Affiliation:
Department of Information Processing, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
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Abstract

AlON thin films formed by the electron cyclotron resonance (ECR) plasma oxidation of the AlN thin films deposited on p/p+−Si(100) by the ECR sputtering method were investigated for high-k gate insulator application. The leakage current density was found to be decreased with the ECR plasma oxidation of the AlN thin films. Furthermore, the equivalent oxide thickness (EOT) of 1.5 nm with the leakage current density of 5.1×10−4 A/cm2 (@Vfb−1 V) was obtained after the 1000°C rapid thermal annealing (RTA) because of the high quality interfacial layer formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E6.10
Copyright
Copyright © Materials Research Society 2004

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References

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