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Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

  • Agata Sakic (a1), Yann Civale (a2), Lis K. Nanver (a3), Cleber Biasotto (a4) and Vladimir Jovanovic (a5)...

Abstract

Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al-mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100) Si substrate and have the ability to merge seamlessly over the oxide.

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Keywords

Al-mediated Solid-Phase Epitaxy of Silicon-On-Insulator

  • Agata Sakic (a1), Yann Civale (a2), Lis K. Nanver (a3), Cleber Biasotto (a4) and Vladimir Jovanovic (a5)...

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