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Alignment of InAs Quantum Dots on GaAs Using the Manipulation of Strain Fields

  • Kwang Moo Kim (a1), Young Ju Park (a2), Young Min Park (a2), Jong Bum Nah (a2), Chan Kyeong Hyon (a2), Eun Kyu Kim (a2) and Jung Ho Park (a1)...

Abstract

We fabricated InAs self-assembled quantum dots (QDs) on strained layer using molecular beam epitaxy. The strained layer consisted of InAs/GaAs superlattice(SL) and GaAs barrier layer on (001) GaAs substrate. Through controlling thickness of the strained layer, we formed two-dimensional alignments of QDs on misfit dislocation arrays along <110> directions made by strained layer. The increase of the strained layer thickness resulted in a stronger alignment of QDs, which were observed by atomic force microscopy studies. The aligned QDs were confirmed to confine carriers well and have different size distributions by photoluminescence measurement.

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