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AlGaN p-i-n Photodiode Arrays for Solar-Blind Applications

  • P. Lamarre (a1), A. Hairston (a1), S. Tobin (a1), K. K. Wong (a1), M. F. Taylor (a1), A. K. Sood (a1), M. B. Reine (a1), M. J. Schurman (a2), I. T. Ferguson (a2), R. Singh (a3) and C. R. Eddy (a3)...

Abstract

This paper presents UV imaging results for a 256×256 AlGaN Focal Plane Array that uses a back-illuminated AlGaN heterostructure p-i-n photodiode array, with 30×30 μm2 unit cells, operating at zero bias voltage, with a narrow-band UV response between 310 and 325 nm. The 256×256 array was fabricated from a multilayer AlGaN film grown by MOCVD on a sapphire substrate. The UV response operability (>0.4×average) was 94.8%, and the UV response uniformity (σ/μ) was 16.8%. Data are also presented for back-illuminated AlGaN p-i-n photodiodes from other films with cutoff wavelengths ranging between 301 and 364 nm. Data for variable-area diagnostic arrays of p-i-n AlGaN photodiodes with a GaN absorber (cutoff=364 nm) show: (1) high external quantum efficiency (50% at V=0 and 62% at V=-9 V); (2) the dark current is proportional to junction area, not perimeter; (3) the forward and reverse currents are uniform (σ/μ=50% for forty 30×30 μm2 diodes at V=−40 V); (4) the reverse-bias dark current data versus temperature and bias voltage can be fit very well by a hopping conduction model; and (5) capacitance versus voltage data are consistent with nearly full depletion of the unintentionally-doped 0.4 μm thick GaN absorber layer and imply a donor concentration of 3-4×1016 cm−3.

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