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AlGaAs Surface Reconstruction after Cl2 Chemical Etch and Ultra High Vacuum Anneal

  • M. Hong (a1), J. P. Mannaerts (a1), L. H. Grober (a1), F. A. Thiel (a1) and R. S. Freund (a1)...

Abstract

We report attaining (3x2) surface reconstruction with streaky reflection high energy electron diffraction (RHEED) patterns on Al0.4Ga0.6As after in-situ Cl2 chemical etch and ultra high vacuum (UHV) anneal. Secondary ion-mass spectrometry (SIMS) analysis at the regrown/etched Al0.4Ga0.6 As interface reveals impurities of O and C in the level of (5±1) × 1012 cm-2 and (3±1) × 1012 cm-2, respectively. These impurity levels are 10 times less than those of Al0.4Ga0.6 As after in-situ electron cyclotron resonance (ECR) plasma etch and UHV anneal without Cl2 chemical etch.

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