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ALD of Lanthanum Aluminate Using Lanthanum Formamidinate Precursor

  • Huazhi Li (a1), Deodatta Vinayak Shenai (a2), Ralph Pugh (a3) and Jiyoung Kim (a4)

Abstract

The physical and electrical characteristics of La2O3 and LaAlO3 films, deposited by atomic layer deposition (ALD) and using a new La formamidinate precursor (La-FAMD), were investigated. The La-FAMD precursor has superior thermal stability and is also the most volatile La source available today. The vapor pressure of La-FAMD, maintained at 100 ºC, is approximately 60 times higher than the commercial available source La-THD (THD = tetramethylheptanedionato).

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Keywords

ALD of Lanthanum Aluminate Using Lanthanum Formamidinate Precursor

  • Huazhi Li (a1), Deodatta Vinayak Shenai (a2), Ralph Pugh (a3) and Jiyoung Kim (a4)

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