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Al2O3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

  • Nola Li (a1), Shen-Jie Wang (a2), William E. Fenwick (a3), Andrew Melton (a4), Chung-Lung Huang (a5), Zhe Chuan Feng (a6), Christopher Summers (a7), Muhammad Jamil (a8) and Ian Ferguson (a9)...

Abstract

GaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/ZnO substrates. Room temperature photoluminescence (RT-PL) showed the red shift of the GaN near band-edge emission, which might be from oxygen incorporation forming a shallow donor-related level in GaN. HRXRD measurements revealed that (0002) InGaN layers were also successfully grown on 20nm Al2O3/ZnO substrates. In addition, thick InGaN layers (∼200-300nm) were successfully grown on Al2O3/ZnO and bare ZnO substrates. These results are significant as previous studies showed decomposition of the layer at InGaN thicknesses of 100nm or less.

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Al2O3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

  • Nola Li (a1), Shen-Jie Wang (a2), William E. Fenwick (a3), Andrew Melton (a4), Chung-Lung Huang (a5), Zhe Chuan Feng (a6), Christopher Summers (a7), Muhammad Jamil (a8) and Ian Ferguson (a9)...

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