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Air Bridge Technology: A Comparison of Novel Interconnect Materials and Integration Schemes for Beyond 45 nm

Published online by Cambridge University Press:  01 February 2011

Kenneth Foster ,
Joost Waeterloos ,
Don Frye ,
Steve Froelicher  and
Mike Mills
Kenneth Foster
Affiliation:
The Dow Chemical Company – Advanced Electronic Materials Midland, Michigan 48674, U.S.A.
Joost Waeterloos
Affiliation:
The Dow Chemical Company – Advanced Electronic Materials Midland, Michigan 48674, U.S.A.
Don Frye
Affiliation:
The Dow Chemical Company – Advanced Electronic Materials Midland, Michigan 48674, U.S.A.
Steve Froelicher
Affiliation:
The Dow Chemical Company – Advanced Electronic Materials Midland, Michigan 48674, U.S.A.
Mike Mills
Affiliation:
The Dow Chemical Company – Advanced Electronic Materials Midland, Michigan 48674, U.S.A.
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Abstract

The electronics industry, in a continual drive for improved integrated device performance, is seeking increasingly lower dielectric constants (k) of the insulators that are used as interlayer dielectric (ILD) for advanced logic interconnects. As the industry continually seeks a stepwise reduction of the “effective” dielectric constant (keff), simple extendibility, leads to the consideration of the highest performance possible, namely air bridge technology. In this paper we will discuss requirements, integration schemes and properties for a novel class of materials that has been developed as part of an advanced technology probe into air bridge architecture. We will compare and contrast these potential technology offerings with other existing dense and porous ILD integration options, and show that the choice is neither trivial nor obvious.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E5.3
Copyright
Copyright © Materials Research Society 2003

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References

12002 Update ITRS Road MapGoogle Scholar
2 Kaanta, C., Roberts, S., U.S. patent 4,987,101, Issued January 22, 1991 to IBM.Google Scholar
3 Havemann, R., Jeng, S., U.S. Patent 5,461,003 issued Oct. 24, 1995 to Texas Instruments.Google Scholar
4 Cotte, J., Jahnes, C., McCullough, K., Moreau, W., Nitta, S., Saenger, K., Simmons, J., U.S. Patent 6,346,484, issued Feb, 12, 2002 to International Business Machines.Google Scholar
5 Arnel, V., Torres, J., Gayet, P, Haond, M., Verove, C., Descouts, B., Spinelli, P., Materials Research Society ULSI XVI Conference Proceedings, (2001).Google Scholar
6 IBM Technical Disclosure Bulletin, vol 38, No 09, page 137–140, September (1995).Google Scholar
7 Kohl, P., Zhao, Q., Patel, K., Schmidt, D., Bidstrup-Allen, S., Shick, R., and Jayaraman, S., Electrochemical and Solid-State Letters, 1 (1) 49–51 (1998).Google Scholar
8 Reed, H., Padovani, A., Wu, X., Bidstrup-Allen, S., Kohl, P., International SEMATECH Ultra Low K Workshop, June 6-7, (2002).Google Scholar
9 Kohl, P., Bhusari, D., Wedlake, M., Cae, C., Klemens, F., Miner, J., Lee, B., Gutmann, R., Shick, R., IEEE Electron Device Letters, Vol. 21, NO. 12, December (2000).Google Scholar
10 , Kohl, et.al. US Patent 6,165,890 – get rest of infoGoogle Scholar
11 Grill, A., Hedrick, J., Jahnes, C., Nitta, S., Petrarca, K., Purushothaman, S., Saenger, K., Whitehair, S., U.S. Patent 6,413,852 issued July 2, (2002) to IBM.Google Scholar
12 Chiang, T. and Saraswat, K., 2001 Symposium on VLSI Technology Digest of Technical Papers (2001).Google Scholar
13 Cheiang, T., Shieh, B. and Saraswat, K., 2002 Symposium on VLSI Technology Digest of Technical Paper section 4.4 (2002).Google Scholar
14 Ho, P.S., Lee, K., Ogawa, E.T., Lu, H., Matsuhashi, H., Blaschke, V.A. and Augur, R., IEDM, section 30 paper 02, (2002).Google Scholar