Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-20T00:09:52.043Z Has data issue: false hasContentIssue false
  • English
  • Français

AFM Measurements of Adhesion between CMP Slurry Particles and Copper

Published online by Cambridge University Press:  01 February 2011

Ruslan Burtovyy ,
Yong Liu ,
Bogdan Zdyrko ,
Alex Tregub ,
Mansour Moinpour ,
Mark Buehler  and
Igor Luzinov
Ruslan Burtovyy
Affiliation:
rburtov@CLEMSON.EDUClemson UniversitySchool of Materials Science and Engineering161 Sirrine Hall, Clemson UniversityClemson SC 29634United States
Yong Liu
Affiliation:
yongl@CLEMSON.EDU, Clemson University, School of Materials Science and Engineering, 161 Sirrine Hall, Clemson University, Clemson, SC, 29634, United States
Bogdan Zdyrko
Affiliation:
luzinov@clemson.edu, Clemson University, School of Materials Science and Engineering, 161 Sirrine Hall, Clemson University, Clemson, SC, 29634, United States
Alex Tregub
Affiliation:
alexander.tregub@intel.com, Intel Corporation, CMO/FMO, Santa Clara, CA, 95054, United States
Mansour Moinpour
Affiliation:
mansour.moinpour@intel.com, Intel Corporation, CMO/FMO, Santa Clara, CA, 95054, United States
Mark Buehler
Affiliation:
mark.buehler@intel.com, Intel Corporation, PTD, Hillsboro, OR, 97124, United States
Igor Luzinov
Affiliation:
luzinov@clemson.edu, Clemson University, School of Materials Science and Engineering, 161 Sirrine Hall, Clemson University, Clemson, SC, 29634, United States
Get access

Abstract

Adhesion between abrasive particles and surfaces being polished plays an important role in chemical mechanical planarization (CMP) processes. The changes in particle - surface and particle – particle interactions can significantly influence the effectiveness of material removal and cleaning methods. To determine the adhesion between actual abrasive particles and different surfaces treated by the CMP process a method employing atomic force microscopy (AFM) technique is being developed.

The monolayer of silica abrasive nanoparticles was deposited on silicon wafer covered with polymer anchoring layer. High affinity of the thin polymer film to the particles and wafer ensures the stability of particles monolayer on the surface during measurements. AFM cantilever was modified with attachment of 20-40 microns hollow glass bead (representing a flat surface), which then was covered with copper using physical vapor deposition technique. Force-distance curves were collected employing AFM force volume mode and used to calculate the adhesion value. The effect of different factors (such as pH, presence of surfactants) on adhesion between copper surface and silica slurry has been studied.

Keywords

CMPCuscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F12-05
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Zhang, F., Busnaina, A., Electrochem. Solid State Lett. 1, 184 (1998).Google Scholar
2 Segeren, L.H.G.J., Siebum, B., Karssenberg, F.G., Berg, J.W.A. van den, and Vancso, G.J., J. Adhesion Sci. Technol., 16, 793 (2002).Google Scholar
3 Stein, D. in Chemical-Mechanical Planarization of Semiconductor Materials, edited by Oliver, M.R. (Springer, 2004) pp. 85–132.Google Scholar
4 Parkg, J.-G., Busnaina, A., Semicond. Int., 28, 39 (2005).Google Scholar
5 Lee, S.-Y., Lee, S.-H. and Park, J.-G., J. Electrochem. Soc., 150, G327 (2003).Google Scholar
6 Liu, Y., Zdyrko, B., Tregub, A., Moinpour, M., Buehler, M., Luzinov, I. in Chemical-Mechanical Planarization–Integration, Technology and Reliability, edited by Kumar, A., Lee, J.A., Obeng, Y.S., Vos, I., Johns, E.C., (Mater. Res. Soc. Proc. 867, Warrendale, PA, 2005) pp. 183–188.Google Scholar
7 Chavez, K. L., Hess, D. W., J. Electrochem. Soc., 148, G640 (2001).Google Scholar
8 Tsai, T.-H., Yen, S.-C., Appl. Surf. Sci., 210, 190 (2003).Google Scholar
9 Choi, H.-H., Park, J. and Singh, R. K., Electrochem. Solid State Lett., 7, C10 (2004).Google Scholar
10 Larson, I., Pugh, R. J., J. Colloid Interface Sci., 208, 399 (1998).Google Scholar
11 Chin, C. J., Yiacoumi, S. and Tsouris, C., Environ. Sci. Technol., 36, 343 (2002).Google Scholar
12 Ma, H., Chen, S., Yin, B., Zhao, S. and Liu, X., Corros. Sci. 45, 867 (2003).Google Scholar
13 Subramanian, V., Ducher, W., J. Phys. Chem. B, 105, 1389 (2001).Google Scholar
14 Gonzalez, G., Travalloni-Louvisse, A.M., Langmuir, 5, 26 (1989).Google Scholar