Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-20T16:33:37.396Z Has data issue: false hasContentIssue false
  • English
  • Français

AES and EELFS Studies of Initial Stages of Growth of GaAs/InAs/GaAs Heterostructures.

Published online by Cambridge University Press:  26 February 2011

F. D. Schowengerdt ,
F. J. Grunthaner  and
John K. Liu
F. D. Schowengerdt
Affiliation:
Physics Dept. Colorado School of Mines Golden, CO 80401
F. J. Grunthaner
Affiliation:
Jet Propulsion Laboratory California Institute of Technology 4800 Oak Grove Dr. Pasadena, CA 91109
John K. Liu
Affiliation:
Jet Propulsion Laboratory California Institute of Technology 4800 Oak Grove Dr. Pasadena, CA 91109
Get access

Abstract

We report on a systematic study of the composition and structure of GaAs/InAs/GaAs quantum wells using Auger Electron Spectroscopy (AES), Extended Energy Loss Fine Structure (EELFS), and Reflection High Energy Electron Diffraction (RHEED) techniques. Double heterostructures with InAs thickness ranging from 2 to 10 monolayers, capped by 2 to 10 monolayers of GaAs, were grown by MBE using a variety of techniques, including those employing sequential, interrupted, and delayed shutter timing sequences. AES peak ratios are compared with model calculations to monitor compositional development of the multilayers. The AES results are correlated with RHEED measurements to determine MBE growth parameters for optimal control of the stoichiometry and surface morphology. EELFS was used to monitor strain in the buried InAs layers. The AES results show departure from smooth laminar growth of layers of stoichiometric InAs on GaAs at temperatures below 420 C and above 470 C. AES results on the quantum well structures suggest floating InAs layers on top of the GaAs and/or facet formation in the GaAs layers. The EELFS results, when compared to bulk InAs, indicate the presence of strain in the buried InAs quantum well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 201
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

l. Lewis, B.F., Lee, T.C., Grunthaner, F.J., Madhukar, A., Fernandez, R., and Masedrjian, J., J. Vac. Sci. Technol. B2, 419 (1984).Google Scholar
2. Houzay, F., Guille, C., Moison, J.M., Henoc, P. and Barthe, F., J. Crystal Growth 81, 67 (1987).Google Scholar
3. Guille, C., Houzay, F., Moison, J.M. and Barthe, F., Surf. Sci. 189/190 (1987).Google Scholar
4. Grunthaner, F.J., Yen, M.Y., Fernandez, R., Lee, T.C., Madhukar, A. and Lewis, B.F., Appl. Phys. Letters 46, 983 (1985), Appl. Phys. Letters 48, 650 (1986).Google Scholar
5. Matthews, J.M. and Blakeslee, A.E., J. Crystal Growth, 27, 118 (1984); 29, 273 (1975); 32, 265 (1976).Google Scholar
6. Schowengerdt, F.D. and Grunthaner, F.J., J. Vac. Sci. Technol. B6.1386 (1988).Google Scholar
7. Ertl, G. and Kuppers, J., Verlag Chemie, Weinheim (1974) p. 7.Google Scholar