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Active Anti-Guide Vertical Cavity Surface Emitting Lasers with Diffused Quantum Wells Structure

Published online by Cambridge University Press:  10 February 2011

S. F. Yu ,
E. Herbert Li  and
W. M. Man
S. F. Yu
Affiliation:
Department of Electrical & Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, sfyu@hkueee.hku.hk
E. Herbert Li
Affiliation:
Department of Electrical & Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, sfyu@hkueee.hku.hk
W. M. Man
Affiliation:
Department of Electrical & Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong, sfyu@hkueee.hku.hk
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Abstract

The enhancement of single transverse mode operation in vertical cavity surface emitting lasers by using interdiffused quantum wells is proposed and analyzed. It is observed that the influence of self-focusing (arising from carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized by introducing a step diffused quantum wells structure inside the core region of quantum-well active layer. Stable single-mode operation in vertical cavity surface emitting lasers can also be maintained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 431
Copyright
Copyright © Materials Research Society 1998

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References

1. Zhao, Y.G. & Mclnerney, J.G., IEEE J. Quantum Electron., Vol.32, no. 11, pp. 1950–1958 (1996).Google Scholar
2. Li, E.H. and Chan, K.S., Electron. Lett., vol.29, pp. 1233–1234 (1993).10.1049/el:19930824Google Scholar
3. Li, E.H., Weiss, B.L., Chan, K.S. and Micallef, J., Appl. Phys. Lett. 62, pp.550–552 (1992).Google Scholar
4. Herny, C.H., Logan, R.A. and Bertness, K.A., J. Appl. Phys. 52, pp. 4457–4461 (1981).Google Scholar
5. Yu, S.F., IEEE J. Quantum Electron., Vol.32, no. 7, pp. 1168–1179 (1996).Google Scholar
6. Yu, S.F., Lo, C.W. and Li, E.H., IEEE J. Quantum Electron, Vol. 33, no. 6, pp. 999–1009 (1997).Google Scholar