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The Achievement of Low Contact Resistance to Indium Phosphide: the Roles of Ni, Au, Ge, and Combinations Thereof

Published online by Cambridge University Press:  25 February 2011

Navid S. Fatemi  and
Victor G. Weizer
Navid S. Fatemi
Affiliation:
Sverdrup Technology, Inc., Lewis Research Center Group, Brook Park, OH 44142
Victor G. Weizer
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
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Abstract

We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity (pc) in the E-7 Ω-cm2 range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in pc. Ultra-low contact resistivities in the E-8 Ω-cm2 range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed pc values in the Ni and the Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 537
Copyright
Copyright © Materials Research Society 1992

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References

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