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Achieve of High-Quality GaAs N-Type Ion Implanted Layer

  • Luo Jinsheng (a1) and Chen Tangsheng (a1)

Abstract

We have found that co-implantation of phosphorus (P) with Si into SI-GaAs caq improve the quality of ion implanted layer. Hall mobilities of 4600–4700 cm2/Vs and activation efficiencies of 75–85% are obtained. These results are better than those obtained from the samples without P co-implantation. Schottky-barrier technique measuerments show a better mobility profile for the samples with P co-implantation. DLTS measurements show that the number of deep levels and their concentrations decrease. We think that P atoms occupy As vacancies and enhance the activation efficiency and their uniformity. The damage produced under the Si-implanted layer by P co-implantation increases the average Hall mobility.

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[1] Inmmrlica, A.A. Jr. et al., in “GaAs and Related Compounds”,edited by Thim, H.W. (The Institute of Physics,Bristol and London), 423(1980).
[2] Miyazama, S. et al., Appl. Phys. Lett. 43, 853(1983).
[3] Sato, T. et al., Appl. Phys. Lett. 51, 755(1987).
[4] Hyuga, F. et al., Appl. Phys. Lett. 50, 1592(1987).
[5] Brozel, M.R., Appl. Phys. tett. 42, 610(1983).
[6] Martin, G.M. et al., J. Appl. Phys. 53, 8706(1982).
[7] Qi, Xiang and Lichun, Wang, Chinese J. of semiconductors, 9, 502(1988).
[8] Lee, Kang et al., IEEE Trans. Electron Devices, ED–31,390(1984).

Achieve of High-Quality GaAs N-Type Ion Implanted Layer

  • Luo Jinsheng (a1) and Chen Tangsheng (a1)

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