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Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology

Published online by Cambridge University Press:  17 March 2011

Shiyang Tian ,
Victor Moroz  and
Norbert Strecker
Shiyang Tian
Affiliation:
Synopsys, Inc., 14911 Quorum Dr., Dallas, Texas 75254
Victor Moroz
Affiliation:
Synopsys, Inc., 700 East Middlefield Road, Mountain View, CA 94043
Norbert Strecker
Affiliation:
Synopsys, Inc., 700 East Middlefield Road, Mountain View, CA 94043
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Abstract

We present an integrated Monte Carlo implant simulator which is capable of accurately simulating ion implantation into any amorphous materials and crystalline Si for 1D/2D/3D structures with arbitrary geometry and topography. With this simulator, we investigate some practical examples which reveal interesting 2D/3D effects, and demonstrate the importance of <110> channeling for sub-100nm silicon technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C6.5
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Obradovic, B., Wang, G., Chen, Y., Li, D., Snell, C., and Tasch, A. F., UT-MARLOWE 5.0 with TOMCAT. The University of Texas at Austin, Austin, Texas, 1999.Google Scholar
[2] Hobler, G., Simionescu, A., Palmetshofer, L., Tian, C., and Stingeder, G., J. Appl. Phys. 77, 3697 (1995).Google Scholar
[3] Posselt, M., Rad. Effs. and Defs. in Solids 130–131, 87 (1994).Google Scholar
[4] Schmidt, B., Posselt, M., Strecker, N., and Feudel, T., Comp. Mat. Sci. 11,87 (1998).Google Scholar
[5] Li, D., Lin, L., Wang, G., Chen, Y., Shrivastav, G., Oak, S., Tasch, A. F., Banerjee, S. K., IEDM Tech. Dig., pp. 38.6.1-4, 2001.Google Scholar
[6] Hoessinger, A., PhD thesis, Technical University Vienna, 2000.Google Scholar
[7] Borland, J. O., Moroz, V., Wang, H., Maszara, W., and Iwai, H., Solid State Technol., p. 52, June 2003.Google Scholar
[8] Synopsys, Inc., Mountain View, CA, Taurus Process Reference Manual, December 2003.Google Scholar
[9] Tian, S., J. Appl. Phys. 93, 5893 (2003). S. Tian, Nucl. Instr. Meth. Phys. Res. B 215, 403 (2004).Google Scholar
[10] Yang, S.-H., Lim, D., Morris, S. J., and Tasch, A. F., Nucl. Instr. Meth. Phys. Res. B 102, 242 (1995).Google Scholar
[11] Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., and Selberherr, S., IEEE Trans. Semicond. Manu. 8, 402 (1995).Google Scholar
[12] Beardmore, K. M. and Grønbech-Jensen, N., Nucl. Instr. Meth. Phys. Res. B 153, 391 (1999).Google Scholar