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Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology

  • Shiyang Tian (a1), Victor Moroz (a2) and Norbert Strecker (a2)

Abstract

We present an integrated Monte Carlo implant simulator which is capable of accurately simulating ion implantation into any amorphous materials and crystalline Si for 1D/2D/3D structures with arbitrary geometry and topography. With this simulator, we investigate some practical examples which reveal interesting 2D/3D effects, and demonstrate the importance of <110> channeling for sub-100nm silicon technology.

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