Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-25T10:33:40.436Z Has data issue: false hasContentIssue false
  • English
  • Français

Acceptors in undoped gallium antimonide

Published online by Cambridge University Press:  01 February 2011

M. K. Lui ,
C. C. Ling ,
X. D. Chen ,
K. W. Cheah  and
K. F. Li
M. K. Lui*
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, China
C. C. Ling*
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, China
X. D. Chen*
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, China
K. W. Cheah*
Affiliation:
Department of Physics, Hong Kong Baptist University, Hong Kong, China
K. F. Li*
Affiliation:
Department of Physics, Hong Kong Baptist University, Hong Kong, China
*
E-mail correspondence: ccling@hku.hk
E-mail correspondence: ccling@hku.hk
E-mail correspondence: ccling@hku.hk
E-mail correspondence: ccling@hku.hk
E-mail correspondence: ccling@hku.hk
Get access

Abstract

Undoped GaSb materials were studied by temperature dependent Hall (TDH) measurements and photoluminescence (PL). The TDH data reveals four acceptor levels (having ionization energies of 7meV, 32meV, 89meV and 123meV) in the as-grown undoped GaSb samples. The 32meV and the 89meV levels were attributed to the GaSb defect and the VGa-related defect. The GaSb defect was found to be the important acceptor responsible for the p-type nature of the present undoped GaSb samples because of its abundance and its low ionization energy. This defect was thermally stable after the 500°C annealing. Similar to the non-irradiated samples, the 777meV and the 800meV PL signals were also observed in the electron irradiated undoped GaSb samples. The decrease of the two peaks' intensities with respect to the electron irradiation dosage reveals the introduction of a non-radiative defect during the electron irradiation process, which competes with the transition responsible for the 777meV and the 800meV PL peaks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.29
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Milnes, A. G. and Polyakov, A. Y., Solid-State Electron. 36, 803 (1993).Google Scholar
2. Dutta, P. S. and Bhat, H. L., J. Appl. Phys. 81, 5821 (1997).Google Scholar
3. Baxter, R. D., Bate, R. T., and Reid, F. J., J. Phys. Chem. Solids 26, 41 (1965).Google Scholar
4. Ichimura, M., Higuchi, K., Hattori, Y., Wada, T., and Kitamura, N., J. Appl. Phys. 68, 6153 (1990).Google Scholar
5. Allégre, J. and Avérous, M., in Defects and Radiation Effects in Semiconductors 1978, Institute of Physics Conference Series No.46 (IOP, London, 1979), Chap. 5. p. 179.Google Scholar
6. Guillacume, C. Benort a la and Lavallard, P., Phys. Rev. B 5, 4900 (1972).Google Scholar
7. Jakowetz, W., Rühle, W., Breuninger, K. and Pilkuhn, M., Phys. Stat. Solidi A 12, 169 (1972).Google Scholar
8. Lee, M., Nicholas, D. J., Singer, K. E. and Hamilton, B., J. Appl. Phys. 59, 2895 (1986).Google Scholar
9. Dutta, P. S., Koteswara Rao, K. S. R., Bhat, H. L. and Kumar, V., Appl. Phys. A 61, 149 (1995).Google Scholar
10. Bignazzi, A., Bosacchi, A., Magnanini, R., J. Appl. Phys. 81, 7540 (1997).Google Scholar
11. Méndez, B., Dutta, P. S., Piqueras, J., Dieguez, E., Appl. Phys. Lett. 67, 2648 (1995).Google Scholar
12. Ling, C. C., Mui, W. K., Lam, C. H., Beling, C. D., Fung, S., Lui, M. K., Cheah, K. W., Li, K. F., Zhao, Y. W., Gong, M., Appl. Phys. Lett. 80 (3934), 2002.Google Scholar
13. Ling, C. C., Fung, S. and Beling, C. D., Phys. Rev. B 64, 075201 (2001).Google Scholar
14. Sze, S. M., Physics of Semiconductor Devices, John, Wiley & Sons (1981).Google Scholar
15. Shaw, D., Semicond. Sci. Technol. 18, 627 (2003).Google Scholar
16. Hakala, M., Puska, M. J. and Nieminen, R. M., J. Appl. Phys. 91, 4988 (2002).Google Scholar
17. Van Der Meulen, Y. J., J. Phys. Chem. Solids 28, 25 (1967).Google Scholar