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Accelerated Stress Testing of a-Si:H TFTs for Amoled Displays

Published online by Cambridge University Press:  21 March 2011

Kapil Sakariya ,
Clement K.M. Ng ,
I-Heng Huang ,
Afrin Sultana ,
Sheng Tao  and
Arokia Nathan
Kapil Sakariya
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Clement K.M. Ng
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
I-Heng Huang
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Afrin Sultana
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Sheng Tao
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
Arokia Nathan
Affiliation:
Electrical and Computer Engineering, University of Waterloo Waterloo, Ontario, N2L 3G1, Canada
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Abstract

In this work, we have developed a method for accelerated stress testing of TFT driver circuits for AMOLED display backplane applications. Based on high current and temperature stress measurements, acceleration factors have been retrieved, which can be used to significantly reduce the testing time required to guarantee a 20000-hour display backplane lifespan.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.11
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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