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X-Ray Measurements of Deformations in Films and Substrates in Heteroepitaxial SYSTEM GaAs/Ge

Published online by Cambridge University Press:  21 February 2011

N. Burle
Affiliation:
Lab. MATOP-CNRS, case 151, Fac. Sciences St-Jérúme, 13397 Marseille Cedex 20, France
B. Pichaud
Affiliation:
Lab. MATOP-CNRS, case 151, Fac. Sciences St-Jérúme, 13397 Marseille Cedex 20, France
O. Thomas
Affiliation:
Lab. MATOP-CNRS, case 151, Fac. Sciences St-Jérúme, 13397 Marseille Cedex 20, France
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Abstract

X-Ray Transmission and Reflection Topography settings have been used to perform stress and strain measurements in the epitaxial system GaAs/Ge : radius of curvature of the whole sample is obtained from the Lang (transmission) set-up ; tetragonal distortion in the layer is deduced from the Berg-Barrett (reflection) setup. Comparison of these results and correlation with dislocations densities estimated from topographs enable the elastic state of the system to be known.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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