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X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

Published online by Cambridge University Press:  10 February 2011

C. H. Chang
Affiliation:
SSRL/SLAC, Stanford University, Stanford, CA 94309 ALS, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
U. Beck
Affiliation:
Sektion Physik der Universität München, 80539 München, Germany
T. H. Metzger
Affiliation:
Sektion Physik der Universität München, 80539 München, Germany
J. R. Patel
Affiliation:
SSRL/SLAC, Stanford University, Stanford, CA 94309 ALS, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

To characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon
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