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XPS and FTIR Study of the Thin Polyimide Films Fabricated by Ionized Cluster Beam Deposition

Published online by Cambridge University Press:  28 February 2011

K. W. Kim
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
K. H. Chae
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
S. C. Choi
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
S. J. Cho
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
Y. W. Vahc
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
C. N. Whang
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
H. J. Jung
Affiliation:
Ceramics Division, Korea Institute of Science and Technology, Seoul 130–650, Korea
D. H. Lee
Affiliation:
Ceramics Division, Korea Institute of Science and Technology, Seoul 130–650, Korea
J. K. LEE
Affiliation:
Ceramics Division, Korea Institute of Science and Technology, Seoul 130–650, Korea
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Abstract

The ionized cluster beam deposition (ICBD) technique has been employed to fabricate high-purity polyimide (PI) films. The pyromellitic dianhydride (PMDA) and oxydianiline (ODA) were deposited using dual ionized cluster beam (ICB) sources. Fourier transform infrared spectroscopy (FT-IR) and X-ray photoemission spectroscopy (XPS) studies show that the bulk and surface chemical properties are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage. At optimum ICBD conditions, the PI films have a maximum imidization and negligible impurities(∼;1% isoimide) probably due to the high surface migration energy and surface cleaning effect.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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XPS and FTIR Study of the Thin Polyimide Films Fabricated by Ionized Cluster Beam Deposition
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