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Xps and Aes Studies of the Initial Stage of CdTe Growth on (100) GaAs by Movpe

Published online by Cambridge University Press:  28 February 2011

Mitsuru Ekawa ,
Kazuhito Yasuda ,
Syuji Sone ,
Yoshiyuki Sugiura ,
Manabu Saji  and
Akikazu Tanaka
Mitsuru Ekawa
Affiliation:
Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa, Nagoya 466, JAPAN
Kazuhito Yasuda
Affiliation:
Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa, Nagoya 466, JAPAN
Syuji Sone
Affiliation:
Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa, Nagoya 466, JAPAN
Yoshiyuki Sugiura
Affiliation:
Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa, Nagoya 466, JAPAN
Manabu Saji
Affiliation:
Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa, Nagoya 466, JAPAN
Akikazu Tanaka
Affiliation:
Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd., Ohme, Tokyo 198, JAPAN
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Abstract

XPS and AES analyses were performed to investigate the initial growth mechanism and the selection of the growth orientations of CdTe layers grown on (100) GaAs substrates by MOVPE. The (100) CdTe growth was reproducibly achieved when the GaAs surface was completely covered by one monolayer of Te before the growth, otherwise (111) growth occurred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 445
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Irvine, S.J.C.,Gough, J.S.,Giess, J.,Gibbs, M.J.,Royle, A.,Taylor, C.A.,Brown, G.T.,Keir, A.M. andMullin, J.B., J.Vac.Sci.Technol. A 7, 285 (1989).10.1116/1.576113Google Scholar
2. Monfroy, G.,Sivananthan, S.,Faurie, J.P. andReno, J.L., J.Vac.Sci.Technol. A 7, 329 (1989).Google Scholar
3. Thompson, J.,Mackett, P.,Jenkin, G.T.,Nguyen Duy, T. andGori, P., J.Cryst.Growth 86, 917 (1988).10.1016/0022-0248(90)90825-6Google Scholar
4. Cibert, J.,Gobil, Y.,Saminadayar, K.,Tatarenko, S.,Chami, A.,Feuillet, G.,Dang, L.S. andLigeoh, E., Appl.Phys.Lett. 54, 828 (1989).10.1063/1.100859Google Scholar
5. Ponce, F.A.,Anderson, G.B. andBallingall, J.M., Surf.Sci. 168, 564 (1986).10.1016/0039-6028(86)90887-3Google Scholar
6. Srinivasa, R.,Panish, M.B. andTemkin, H., Appl.Phys.Lett. 50, 1441 (1987).10.1063/1.97848Google Scholar
7. Feldman, R.D.,Kisker, D.W.,Austin, R.F.,Jeffers, K.S. andBridenbaugh, P.M., J.Vac.Sci.Technol. A 4, 2234 (1986).10.1116/1.574061Google Scholar
8. Faurie, J.P.,Hsu, C.,Sivananthan, S. andChu, X., Surf.Sci. 168, 473 (1986).Google Scholar
9. Ballingall, J.M.,Wroge, M.L. andLeopold, D.J., Appl.Phys.Lett. 48, 1273 (1986).10.1063/1.97001Google Scholar
10. Otsuka, N.,Kolodzieski, L.A.,Gunshor, R.L.,Datta, S.,Bicknell, R.N. andSchetzina, J.F., Appl.Phys.Lett. 46, 860 (1985).10.1063/1.95865Google Scholar
11. Mar, H.A.,Salansky, N. andChee, K.T., Appl.Phys.Lett. 44, 898 (1984).10.1063/1.94927Google Scholar
12. Cibert, J.,Saminadayar, K.,Tatarenko, S. andGobil, Y., Phys.Rev. B 39, 12047 (1989).Google Scholar
13. Feldman, R.D.,Austin, R.F.,Kisker, D.W.,Jeffers, K.S. andBridenbaugh, P.M., Appl.Phys.Lett. 48, 248 (1986).10.1063/1.96571Google Scholar
14. Massies, J. andContour, J.P.,Appl, J..Phys. 58, 806 (1985).Google Scholar
15. Contour, J.P.,Massies, J.,Saletes, A. andStaib, P., Appl.Phys. A 38, 45 (1985).10.1007/BF00618725Google Scholar
16. Alnot, P.,Wyczisk, F. andFriederich, A., Surf.Sci. 162, 708 (1985).10.1016/0039-6028(85)90970-7Google Scholar
17. Yasuda, K.,Iwakami, Y. andSaji, M., In Proceedings of the 9th Intern. Conf. Cryst.Growth, (Sendai, Japan, 1989), (to be published in J.Cryst.Growth).Google Scholar
18. Raizman, A.,Oron, M.,Cinader, G. andShtrikman, H., J.Appl.Phys. 67, 1554 (1990).Google Scholar
19. Cohen-Solal, G.,Bailly, F. andMarbe, M., Appl.Phys.Lett. 49, 1519 (1986).10.1063/1.97320Google Scholar
20. Mar, H.A.,Chee, K.T. andSalansky, N., Appl.Phys.Lett. 44, 237 (1984).10.1063/1.94683Google Scholar