Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-11T22:54:02.813Z Has data issue: false hasContentIssue false
  • English
  • Français

The Wide band p- type material formed by the thin film with ZnO - NiO mixed crystal system

Published online by Cambridge University Press:  22 April 2013

Mikihiko Nishitani ,
Masahiro Sakai  and
Yukihiro Morita
Mikihiko Nishitani
Affiliation:
Panasonic Device Science Research Alliance Laboratory Osaka University
Masahiro Sakai
Affiliation:
Panasonic Device Science Research Alliance Laboratory Osaka University
Yukihiro Morita
Affiliation:
Panasonic Device Science Research Alliance Laboratory Osaka University
Get access

Abstract

We study ZnO-NiO mixed crystal thin film as a wide band p-type material for the hetero-junction with ZnO. As for the hetero-junction of the ZnO ( n-type ) and the NiO which have relatively stable p-type semiconductor characteristics, there are issues on the crystallographic mismatch and the band offset of the valence band as well as the conduction band . We made the ZnO-NiO mixed crystal thin film in all composition range with the substrate temperature of 250°C, using magnetron sputtering process and acquired the basic data for the change of electrical conductivity with conduction type. In addition, a high-quality thin film was made by using a Pulse Laser Deposition ( PLD ) , and the band diagram of the ZnO-NiO mixed crystal system was illustrated from the analyses of XPS, NEXAFS and optical absorption measurements. As a result, the offset of ZnO-NiO mixed crystal film is proportionally decreasing with increasing the content of ZnO in NiO film. And the characteristics of the diode with the hetero-junction of ZnNiO/ZnO were improved compared with that of NiO/ZnO. The reasons were discussed with the data of the band offset, the crystalline of the films and the interface properties with the NiO/ZnO and the ZnNiO/ZnO.

Keywords

Nisemiconductingx-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 399 - 404
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sato, H., Minami, T., Takata, S. and Yamada, T., Thin Solid Films, 236, 27–31 (1993).CrossRefGoogle Scholar
Vygranenko, Y., Wang, K., and Nathan, A., Appl. Phys. Lett. 89, 172105 (2006)..CrossRefGoogle Scholar
Kwong, Y.H., Chun, S.H., Han, J. and Cho, H. K., Met.Mater. Int. 18(6), 1003 (2012)..CrossRefGoogle Scholar
Ohta, H., Hirano, M., Nakahara, K., Maruta, H., Tanabe, T., Kamiya, M., Kamiya, T., and Hosono, H., Appl. Phys. Lett. 83, 1029 (2003).CrossRefGoogle Scholar
Ishida, Y., Fujimoto, A., Ohta, H., Hirano, M., and Hosono, H., Appl. Phys.Lett. 89, 153502 (2006).CrossRefGoogle Scholar
Chen, Xinman, Ruan, Kaibin, Wu, Guangheng, and Bao, Dinghua, Appl. Phys. Lett. 93, 112112 (2008).CrossRefGoogle Scholar
Newman, R. and Chrenko, R.M., Phys. Rev. 114(6), 1507 (1959).CrossRefGoogle Scholar