Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-cxxrm Total loading time: 0.181 Render date: 2021-11-30T02:37:47.972Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics

Published online by Cambridge University Press:  01 February 2011

Sandrine Rivillon Amy
Affiliation:
rivillon@physics.rutgers.edu Rutgers University Department of Chemistry and Chemical Biology 136 Frelinghuysen Rd Piscataway NJ 08854 United States
Yves J Chabal
Affiliation:
yves@agere.rutgers.edu, Rutgers University, Department of Chemistry and Chemical Biology, 136 Frelinghuysen Rd, Piscataway, NJ, 08854, United States
Fabrice Amy
Affiliation:
famy@princeton.edu, Princeton University, Electrical Engineering Department, Princeton, NJ, 08544, United States
Antoine Kahn
Affiliation:
kahn@princeton.edu, Princeton University, Electrical Engineering Department, Princeton, NJ, 08544, United States
Cristiano Krugg
Affiliation:
Cristiano.Krugg@SEMATECH.org, Sematech, AGS dielectrics, Austin, Tx, 78741, United States
Paul Kirsch
Affiliation:
Paul.Kirsch@SEMATECH.org, Sematech, AGS dielectrics, Austin, Tx, 78741, United States
Get access

Abstract

One of the major difficulties preventing the wide use of germanium (epi or bulk) as a gate material is the poor stability of its oxide, leading to reproducibility and reliability issues. In contrast to silicon, the nature and thickness of Ge “native” oxides are history dependent, and most phases of germanium oxide are water-soluble. As a result, the procedures for passivating Ge surfaces with hydrogen (HF last) are more complex and less forgiving.

We have used infrared absorption spectroscopy and x-ray photoelectron spectroscopy to investigate the nature of oxidized and H-terminated Ge surfaces. The GeO2, GeO and GeC phases have been identified and quantified as a function of processing conditions. The stability of the H-terminated surfaces has been examined in air and in controlled environments. The H-passivated Ge surfaces are found to be much less stable in air than H-terminated Si surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Laubengayer, A. W., and Morton, D. S., J. Am. Chem. Soc., 54:2303 (1932)CrossRefGoogle Scholar
2 Sun, S., Sun, Y., Liu, Z., Lee, D. I., Peterson, S., and Pianetta, P., Appl. Phys. Lett., 88:021903 (2006)CrossRefGoogle Scholar
3 Onsia, B., Conard, T., De Gendt, S., Heynes, M., Hoflijk, I., Mertens, P., Meuris, M., Raskin, G., Sioncke, s., Teerlinck, I., Theuwis, A., Van Steenbergen, J., and Vinckier, C., Solid State Phenom., 103–104:19 (2005)CrossRefGoogle Scholar
4 Deegan, T., and Hughes, G., Appl. Surf. Sci, 123–124:66 (1998)CrossRefGoogle Scholar
5 Zhang, X.-J., Xue, G., Agarwal, A., Tsu, R., Hasan, M.-A., Greene, J. E., and Rockett, A., J. Vac. Sci. Technol. A, 11:2553 (1993)CrossRefGoogle Scholar
6 Prabhakaran, K., and Ogino, T., Surf. Sci., 325:263 (1995)CrossRefGoogle Scholar
7 Maroun, F., Ozanam, F., and Chazalviel, J.-N., J. Phys. Chem. B, 103:5280 (1999)CrossRefGoogle Scholar
8 Galeener, F. L., and Lucovsky, G., Phys. Rev. Lett., 37:1474 (1976)CrossRefGoogle Scholar
9 Vilcamero, J., Marques, F. C., and L., Freire F. Jr, J. Appl. Phys., 84:174 (1998)CrossRefGoogle Scholar
10 Vilcamero, J., and Marques, F. C., Appl. Phys. A, 70:581 (2000)CrossRefGoogle Scholar
11 Withnall, R., and Andrews, L., J. Phys. Chem., 94:2351 (1990)CrossRefGoogle Scholar
12 Miyazaki, S., Sakamoto, K., Shiba, K., and Hirose, M., Thin Solid Films, 255:99 (1995)CrossRefGoogle Scholar
13 Choi, K., and Buriak, J. M., Langmuir, 16:7737 (2000)CrossRefGoogle Scholar
14 Rivillon, S., Amy, F., Kahn, A., and Chabal, Y. J., Appl. Phys. Lett., 87:253101 (2005)CrossRefGoogle Scholar
15 Chabal, Y. J., Surf. Sci., 168:594 (1986)CrossRefGoogle Scholar
16 Gaydon, A. G., ed.) Chapman & Hall, London (1968)Google Scholar
17 Hoffmann, L., Bach, J. C., Bech Nielsen, B., Leary, P., Jones, R., and Oberg, S., Phys. Rev. B, 55:11167 (1997)CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *