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Very Low Temperature E-gun Evaporated Gate Oxide of TFTs on Plastic Substrates

Published online by Cambridge University Press:  17 March 2011

Cheon-Hong Kim
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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Abstract

A high-quality silicon dioxide (SiO2) suitable for a gate oxide on plastic substrates is successfully deposited by e-gun evaporation at room temperature. The e-gun evaporated oxide film is free from troublesome hydrogen atoms and high-energy ion damage, which ensures good electrical characteristics. N2O/N2 plasma post-treatment was effective to reduce the flat band voltage and leakage current of the evaporated oxides due to the passivation of high-energy nitrogen and oxygen radicals. In the SiO2 film treated by N2O/N2 plasma for 1 minute, the flat band voltage has been reduced from −2.5V to about −0.5V and the leakage current has been decreased by more than one order. Our experimental results show that very low temperature SiO2 film suitable for a gate insulator of TFTs on the plastic substrates has been successfully obtained by the e-gun evaporation and N2O/N2 plasma post-treatment.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Sandoe, J. N., SID 98 Dig., 293 (1998).Google Scholar
2. Gosain, D. P., Noguchi, T., Machida, A. and Usui, S., AMLCD'99, 239 (1999).Google Scholar
3. Carey, P. G., Smith, P. M., Thesis, S. D. and Wickboldt, P., J. Vac. Sci. technol. A 17, 1946 (1999).CrossRefGoogle Scholar
4. Furukawa, K., Liu, Y., Nakashima, H., Gao, D., Kashiwazaki, Y., Uchino, K., Muraoka, K. and Tsuzuki, H., J. Appl. Phys. 84, 4579 (1998).CrossRefGoogle Scholar
5. Deshmukh, S. C. and Aydil, E. S., Appl. Phys. Lett. 65, 3185 (1994).CrossRefGoogle Scholar

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