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Use of Selective Area Defect Creation for Isolation of III-V Multilayer Structures

Published online by Cambridge University Press:  03 September 2012

S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
J. R. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
L. A. D'asaro
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
R. G. Elliman
Affiliation:
Australian National University, Canberra, ACT
M. C. Ridgway
Affiliation:
Australian National University, Canberra, ACT
C. Jagadish
Affiliation:
Australian National University, Canberra, ACT
J. S. Williams
Affiliation:
Australian National University, Canberra, ACT
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Abstract

Deep level acceptor and donor centers are created in III-V materials by energetic ion bombardments. The controlled introduction of these centers by selective area implantation can be used to provide electrical and optical isolation of neighbouring devices. We will contrast the implant isolation characteristics of GaAs and AlGaAs with materials such as InP and InGaAs, and also with the ternary compounds InGaP and AllnP, for which there has previously been little information. In all of these materials the as implanted resistivity is controlled by hopping conduction processes, with p « e×p (T 0.25). Post-implant annealing can be used to achieve resistivities of > 108 Ωcm in initially highly doped material provided the implant doses are correctly chosen. These defect engineered regions may be made many microns deep by using overlapping multiple-energy keV implants or a single MeV implant. In the latter case a nearly flat damage profile can be achieved over depths typical of HBT, SEED or long-wavelength laser epitaxial thicknesses. Examples of these devices which rely on controlled introduction of deep level defects for their operation will be given.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

1. Ren, F., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J. R. and Yanof, A. W., Appl. Phys. Lett. 56 860 (1990).CrossRefGoogle Scholar
2. D'Asaro, L. A., Chirovsky, L. M. F., Kopf, R. F. and Pearton, S. J., Adv. Proc. and Characterization Technologies (Am. Vac. Soc. Series 10), ed. Holloway, P. H., pp. 192195 (1991).Google Scholar
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4. Elliman, R. G., Ridgway, M. C and Williams, J. S., Mat. Res. Soc. Symp. Proc. 216 291 (1991).CrossRefGoogle Scholar
5. Elliman, R. G., Ridgway, M. C., Jagadish, C., Pearton, S. J., Ren, F., Lothian, J., Fullowan, T. R., Katz, A., Abernathy, C. R. and Kopf, R. F., J. Appl. Phys. 71 1010 (1992).CrossRefGoogle Scholar
6. Abernathy, C. R., J. Cryst. Growth 1–7 982 (1991).CrossRefGoogle Scholar

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