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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

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Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs

Published online by Cambridge University Press:  26 February 2011

F. Ren ,
A. B. Emerson ,
S. J. Pearton ,
W. S. Hobson ,
T. R. Fullowan  and
J. Lothian
F. Ren
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
A. B. Emerson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
J. Lothian
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

The use of wet-chemical removal of native oxide in a sealed nitrogen ambient prior to deposition of metal on GaAs is shown to be an effective method of engineering the Schottky barrier height of the metal contacts. Due to its higher metal work function, a barrier height of 0.98 eV for Pt on n-type GaAs is demonstrated. This is considerably higher than the barrier height of conventionally processed TiPtAu contacts (0.78 eV). MESFETs fabricated using PtAu bilayer contacts show reverse currents an order of magnitude lower than TiPtAu contacted companion devices, higher reverse breakdown voltages and much lower gate leakage. Utilizing this technology of oxide removal and the PtAu bilayer contact provides a much simpler method of enhancing the barrier height on n-type GaAs than other techniques such as counter-doping the near-surface or inserting an interfacial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 409
Copyright
Copyright © Materials Research Society 1992

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References

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Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs
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