Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-8sgpw Total loading time: 0.348 Render date: 2021-03-05T08:09:46.873Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs

Published online by Cambridge University Press:  26 February 2011

F. Ren
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
A. B. Emerson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
J. Lothian
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
Get access

Abstract

The use of wet-chemical removal of native oxide in a sealed nitrogen ambient prior to deposition of metal on GaAs is shown to be an effective method of engineering the Schottky barrier height of the metal contacts. Due to its higher metal work function, a barrier height of 0.98 eV for Pt on n-type GaAs is demonstrated. This is considerably higher than the barrier height of conventionally processed TiPtAu contacts (0.78 eV). MESFETs fabricated using PtAu bilayer contacts show reverse currents an order of magnitude lower than TiPtAu contacted companion devices, higher reverse breakdown voltages and much lower gate leakage. Utilizing this technology of oxide removal and the PtAu bilayer contact provides a much simpler method of enhancing the barrier height on n-type GaAs than other techniques such as counter-doping the near-surface or inserting an interfacial layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below.

References

[1] See for example, Eglash, S. J., Newman, N., Pan, S., Mo, D., Shenai, K., Spicer, W. E., Shenai, F. A. and Collins, D. M., J. Appl. Phys. 61 5159 (1987), and references therein.CrossRefGoogle Scholar
[2] Stanchina, W. E., Clark, M. D., Vaidyanathan, K. V., Juliens, R. A. and Crowell, C. R., J. Electrochem. Soc. 134 967 (1987).CrossRefGoogle Scholar
[3] Priddy, K. L., Kitchen, D. P., Grzyb, J. A., Litton, C. W., Henderson, T. S., Peng, C-K., Kopp, W. F. and Morkoc, H., IEEE Trans. Electron. Dev. ED-34 175 (1987).CrossRefGoogle Scholar
[4] Eizenberg, M., Callegari, A. C., Sadana, D. K., Hovel, H. J. and Jackson, T. N., Appl. Phys. Lett. 54 1696 (1989).CrossRefGoogle Scholar
[5] Baier, S. M., Lee, G. Y., Chung, H. K., Fure, B. J. and Cirillo, N. C., Electron. Lett. 23 223 (1987).CrossRefGoogle Scholar
[6] Pearton, S. J., Ren, F., Abernathy, C. R., Hobson, W. S., Chu, S. N. G. and Kovalchick, J., Appl. Phys. Lett. 55 1342 (1989).CrossRefGoogle Scholar
[7] Waldrop, J. R. and Grant, R. W., Appl. Phys. Lett. 52 17974 (1988).CrossRefGoogle Scholar
[8] Ren, F., Emerson, A. B., Pearton, S. J., Fullowan, T. R. and Brown, J. M., Appl. Phys. Lett. 58 1030 (1991).CrossRefGoogle Scholar
[9] Callegari, A., Lacey, D. and Pan, E. T.-S., Solid State Electronics 29 523 (1986).CrossRefGoogle Scholar
[10] Woodall, J. M. and Freeouf, J. L., J. Vac. Sci. Technol., 21 574 (1982).CrossRefGoogle Scholar
[11] Rhoderick, E. H. and Williams, T. H., “Metal-Semiconductor Contacts (Oxford Science, UK 1988).Google Scholar
[12] Iwasaki, H., Mizokawa, Y., Nishitani, R. and Nakamura, J. J. of Appl. Phys. 17 315 (1978).CrossRefGoogle Scholar
[13] Sze, S. M., “Physics of Semiconductor Device” (Wiley NY 1981).Google Scholar
[14] Rhoderick, E. H. and Williams, R. H., “Metal-Semiconductor Contacts” (Clarendon, Oxford, 1988).Google Scholar
[15] Schottky, W., Phys. Rev. 26, 843 (1938).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 6 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 5th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *