Published online by Cambridge University Press: 10 February 2011
In this paper, we report the study of rapid thermal oxidation of silicon in N2O ambient using the Applied Materials RTP Centura rapid thermal processor, and N2O oxide thickness and compositional uniformities with respect to gas flow rate and wafer rotation speed as well as other process parameters. It was found that N2O oxide uniformity is strongly dependent on gas flow rate and wafer rotation speed in addition to process pressure. With optimized setting of the process parameters, excellent oxidation uniformities (one sigma < 1%) were obtained at atmospheric pressure N2O ambient. Nitrogen concentrations of such uniform oxides grown at 1050°C atmospheric pressure N2O oxidation processes were 1.7% for a 40Å oxide and 2.5% for a 60Å oxide, respectively, as characterized by SIMS analysis.
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