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Ultra-Short Pulse Laser Annealing

Published online by Cambridge University Press:  15 February 2011

Kenji Gamo
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
Kouichi Murakami
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan
Mitsuo Kawabe
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan
Susumu Namba
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
Yoshinobu Aoyagi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan The Institute of Physical and Chemical Research, Wako-shi, Saitama, 351, Japan
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Abstract

A single picosecond pulse laser annealing of ion-implanted Si is reviewed as ultra-short pulse laser annealing, comparing them with nanosecond pulse and picosecond-pulse train annealing. In order to clarify the physical mechanism of pulsed laser annealing, the dynamic behavior of the amorphous to crystalline transition has been investigated by means of time-dependent optical reflectivity measurement at 0.63 µm (cw) and 1.06 µm (30-ps pulse itself) under the irradiation of the annealing beam of a single 30-ps laser pulse at 1.06 µm. A tentative model is proposed for explaining the results and further problems which remain to be resolved are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. For example; Reintyes, J.F. and McGroddy, J.C., Phys. Rev. Letters 30, 901 (1973);CrossRefGoogle Scholar
1a Auston, D.H., Shank, C.V. and LeFur, P., Phys. Rev. Letters 35, 1022 (1975) andCrossRefGoogle Scholar
1b Phys. Rev. Letters 32, 1120 (1974);CrossRefGoogle Scholar
Smirl, A.L., Physics of Nonlinear Transport in Semiconductors, eds. Ferry, D.K. et al. (Plenum Press, 1979); andGoogle Scholar
1c Elci, A., Smirl, A.L., Leung, C.Y. and Scully, M.O., Solid-State Electronics 21, 151 (1978).CrossRefGoogle Scholar
2. Murakami, K., Kawabe, M., Gamo, K., Namba, S. and Aoyagi, Y., Phys. Letters 70A, 332 (1979)CrossRefGoogle Scholar
3. Murakami, K., Gamo, K., Namba, S., Kawabe, M., Aoyagi, Y. and Akasaka, Y., Proc. of Laser-Solid Interactions and Laser Processing, Boston, 1978, eds. Ferris, S.D. et al. (AIP Conf. Proc. No. 50, 1979) p. 61.Google Scholar
4. Murakami, K., Gamo, K., Namba, S., Kawabe, M. and Aoyagi, Y., Appl. Phys. Letters 35, 628 (1979)CrossRefGoogle Scholar
5. Murakami, K., Gamo, K., Kawabe, M., Namba, S. and Aoyagi, Y., Japan. J. Appl. Phys. 18, 2311 (1979)CrossRefGoogle Scholar
6. Murakami, K., Gamo, K., Namba, S., Kawabe, M. and Aoyagi, Y.: Proc. of Symp. on Laser and Electron Beam Processing of Materials, Cambridge, 1979, eds. White, C.W. and Peercy, P.S. (Academic Press, 1980) p. 162.Google Scholar
7. Murakami, K., Kawabe, M., Gamo, K., Namba, S. and Aoyagi, Y., Proc. of 15th Intern. Conf. on the Physics of Semiconductors, Kyoto, 1980 (to be published).Google Scholar
8. Liu, P.L., Bloembergen, N. and Hodgson, R.T., Appl. Phys. Letters 34, 864 (1979)CrossRefGoogle Scholar
9. Liu, P.L., Yen, R., Bloembergen, N. and Hodgson, R.T.: Proc. of Symp. on Laser and Electron Beam Processing of Materials, Cambridge, 1979, eds. White, C.W. and Peercy, P.S. (Academic Press, 1980) p. 156.Google Scholar
10. Baumgart, H., Phillipp, F., Vebbing, R. and Rozgonyi, G.A., Proc. of 11th Intern. Conf. onDefects and Radiation Effects in Semiconductors, Oiso, 1980 (to be published).Google Scholar
11. Walser, R.M. and Becker, M.F.: Proc. of Laser-Solid Interactions and Laser Processing, Boston, 1978, ads. S.D. Ferris at al. (AIP Conf. Proc. No. 50, 1979) p. 117 and Proc. of this symposium.Google Scholar
12. Brown, B.L.: Proc. of Symp. on Laser and Electron Beam Processing of Materials, Cambridge, 1979, ads. White, C.W. and Peercy, P.S. (Academic Press, 1980) p. 20.Google Scholar
13. Van Vechten, J.A., Tsu, R., Saris, F.W. and Hoonhout, D., Phys. Lett. 74A, 417 and 422 (1979).CrossRefGoogle Scholar
14. Kramer, D.A. and Honig, R.E., Appl. Phys. Letters 13, 115 (1968).CrossRefGoogle Scholar
15. Tsu, R., Hodgson, R.T., Tan, T.Y. and Baglin, J.E., Phys. Rev. Letters 42, 1356 (1979).CrossRefGoogle Scholar
16. Auston, D.H., Golovchenko, J.A., Simons, A.L., Surko, C.M. and Venkatesan, T.N.C.: Appl. Phys. Letters 33, 437 (1978) and Proc. of Laser-Solid Interactions and Laser Processing, Boston, 1978, ads. S.D. Ferris at al. (AIP Conf. Proc. No. 50, 1979) p.11.CrossRefGoogle Scholar
17. Bosacchi, B., Leung, C.Y. and Scully, M.O.: Optics Comm. 27, 475 (1978) and A.L. Smirl: in ref. [1].CrossRefGoogle Scholar
18. Yoffa, E.J., Phys. Rev. 21, 2415 (1980).CrossRefGoogle Scholar
19. Surko, C.M., Simons, A.L., Auston, D.H., Golovchenko, J.A., Slusher, R.E. and Venkatesan, T.N.C., Appl. Phys. Letters 34, 635 (1979).CrossRefGoogle Scholar
20. Lo, H.W. and Compaan, A.: Phys. Rev. Letters 44, 1604 (1980) and Proc. of 11th Intern. Conf. on Defects and Radiation Effects in Semiconductors, Oiso, 1980 (to be published).CrossRefGoogle Scholar
21. Hoonhout, D. and Saris, F.W., Phys. Letters 74A, 253 (1979).CrossRefGoogle Scholar
22. Yamada, M., Kotani, H., Yamazaki, K., Yamamoto, K. and Abe, K., Proc. of 15th Intern. Conf. onthe Physics of Semiconductors, Kyoto, 1980 (to be published).Google Scholar
23. Andrew, R., Baufay, L., Lavde, L.D., Lovato, M. and Wautelet, M., J. de Physique, Colloque C-4, supplement No. 5, p. 71 (1980).Google Scholar

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