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Ultra Thin Cu film Fabrication by Supercritical Fluid Deposition for ULSI Metallization

Published online by Cambridge University Press:  01 February 2011

Takeshi Momose
Affiliation:
momo@dpe.mm.t.u-tokyo.ac.jp, The University of Tokyo, Department of Materials Engineering,, 7-3-1 Hongo, Bunkyo-ku, Tokyo, N/A, Japan, +81-3-5841-7131, +81-3-5841-6947
Masakazu Sugiyama
Affiliation:
sugiyama@ee.t.u-tokyo.ac.jp, The University of Tokyo, Institute of Engineering Innovation, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Yukihiro Shimogaki
Affiliation:
shimo@dpe.mm.t.u-tokyo.ac.jp, The University of Tokyo, Department of Materials Engineering,, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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Abstract

Initial nucleation and succeeding coalescence in supercritical fluid deposition (SCFD) of Cu was studied in situ by using our devised monitoring technique, i.e. surface reflectivity measurement of visible white light. Fabrication of 10nm-thick smooth and continuous Cu film required by ULSI metallization, was succeeded. Complete filling without any seems and voids into various via patterns of 50 - 200 nm in diameter and 1 μm in depth was also achieved, which was revealed through angled polishing of patterned substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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