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Ultra High Voltage Electron Microscopy Study of {113}-Defect Generation in Si Nanowires

Published online by Cambridge University Press:  30 September 2014

J. Vanhellemont
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Japan. On leave from Department of Solid State Sciences, Ghent University, Belgium.
S. Anada
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Japan.
T. Nagase
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Japan.
H. Yasuda
Affiliation:
Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Japan.
H. Bender
Affiliation:
IMEC, Leuven, Belgium.
R. Rooyackers
Affiliation:
IMEC, Leuven, Belgium.
A. Vandooren
Affiliation:
IMEC, Leuven, Belgium.
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Abstract

Results are presented of a study of {113}-defect formation in Si nanowires with diameters ranging from 50 to 500 nm. The Si nanowires, used for the processing of tunnel-FET's, are etched into a moderately doped epitaxial Si layer on a heavily doped n-type Si substrate. {113}- defects are created in situ by 2 MeV e-irradiation at temperatures between room temperature and 375 °C in an ultra high voltage electron microscope. The observations are discussed in the frame of intrinsic point defect out-diffusion and interaction with dopant atoms.

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Copyright
Copyright © Materials Research Society 2014 

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References

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