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Transport and Optical Characteristics of Al-rich AlO Film and its Application to a Non-volatile Memory

Published online by Cambridge University Press:  01 February 2011

Shunji Nakata
Affiliation:
nakata@aecl.ntt.co.jp, NTT, Microsystem Integration Labs., 3-1 Morinosato Wakamiya, Atsugi-shi, 243-0198, Japan
Shingo Nagai
Affiliation:
2035naga@ec.t.kanazawa-u.ac.jp, Kanazawa University, Grad. School of Natural Sci. & Tech., Kakuma, Kanazawa, 920-1192, Japan
Minoru Kumeda
Affiliation:
kumeda@t.kanazawa-u.ac.jp, Kanazawa University, Grad. School of Natural Sci. & Tech., Kakuma, Kanazawa, 920-1192, Japan
Takeshi Kawae
Affiliation:
kawae@ec.t.kanazawa-u.ac.jp, Kanazawa University, Grad. School of Natural Sci. & Tech., Kakuma, Kanazawa, 920-1192, Japan
Akiharu Morimoto
Affiliation:
amorimot@ec.t.kanazawa-u.ac.jp, Kanazawa University, Grad. School of Natural Sci. & Tech., Kakuma, Kanazawa, 920-1192, Japan
Yoshitada Katagiri
Affiliation:
ykatagiri@karc.nict.go.jp, NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, 243-0198, Japan
Tatsuo Shimizu
Affiliation:
t-shimizu@po4.nsk.ne.jp, Kanazawa University, Grad. School of Natural Sci. & Tech., Kakuma, Kanazawa, 920-1192, Japan
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Abstract

We propose the new process for fabricating Al-rich Al2O3 thin film, which is used as a charge storage layer for non-volatile Al2O3 memory. Nanoscale Al-rich thin film is deposited using RF magnetron co-sputtering by setting an Al metal plate on an Al2O3 target. Al-rich Al2O3 shows a larger conduction current in I-V characteristics and larger optical absorption than stoichiometric Al2O3 due to the increased electron trap sites. The C-V characteristics of the Al-rich Al2O3 thin film show a large hysteresis window due to the charge trapping effect in the Al-rich structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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