Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Home
  • Home
EnglishFrançais
MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

Article contents

Transient Leakage Currents in Amorphous Silicon Thin-Film Transistors

Published online by Cambridge University Press:  21 February 2011

M. Hack ,
H. Steemers  and
R. Weisfield
M. Hack
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
H. Steemers
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. Weisfield
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

In this paper we present both experimental data and computer simulations of the leakage characteristics of amorphous silicon (a-Si) thin film transistors operated under time transient conditions. The transient behaviour of these devices for realistic operating conditions is often very different from their steady-state characteristics, due to the slow response of deep traps in a-Si. Our model is in good agreement with the data and realistically accounts for the time-dependent behaviour of amorphous silicon with leakage being mainly determined by a combination of fixed charge in the passivation dielectric and a distribution of surface states at the top silicon interface. We show how voltage pulses applied to the gate of a TFT affect its performance as a pixel switch in a two-dimensional array. In particular we concentrate on the effects of light and bias stressing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 949
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below.
If you should have access and can't see this content please contact technical support.

References

1) Thompson, M.J. et al, Extended Abstracts 22nd International Conference on Solid State Devices and Materials, Sendai, Japan 1990 p. 945 Google Scholar
2) van Berkei, C., Hughes, J.R. and Powell, M.J., MRS Symp. Proc. 95, 445 (1987)CrossRefGoogle Scholar
3) van Berkei, C., Hughes, J.R. and Powell, M.J., J. Appl. Phys. 66, 4488 (1989)CrossRefGoogle Scholar
4) Willums, M.F., Hack, M., LeComber, P.G. and Shaw, J., these proceedingsGoogle Scholar
5) Hack, M. and Shaw, J.G., MRS Symp. Proc. 219, 315 (1991)CrossRefGoogle Scholar
6) Hack, M. and Shaw, J., J. of Appl. Phys. 68, 5337 (1990)CrossRefGoogle Scholar
7) Possin, G. E., MRS Symp. Proc. 219, 327 (1991)CrossRefGoogle Scholar
8) Globus, T., Shur, M. and Hack, M., these proceedingsGoogle Scholar
9) Powell, M. J., Deane, S.C. and Milne, W.I., Appl. Phys. Lett. 60, 207 (1992)CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 7 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 28th January 2021. This data will be updated every 24 hours.

5 Cited by
Hostname: page-component-898fc554b-v228l Total loading time: 0.365 Render date: 2021-01-28T00:19:17.899Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Transient Leakage Currents in Amorphous Silicon Thin-Film Transistors
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Transient Leakage Currents in Amorphous Silicon Thin-Film Transistors
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Transient Leakage Currents in Amorphous Silicon Thin-Film Transistors
Available formats
×
×

Reply to: Submit a response

Your details

Conflicting interests

Do you have any conflicting interests? *