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Total Dose Radiation Effects In Si Nanocrystal Non-Volatile Memory Transistors
Published online by Cambridge University Press: 01 February 2011
Abstract
We report results pertinent to the high total dose tolerance of Si nanocrystal non-volatile memory cells. The nc-Si FETs made by ion implantation retained virtually unchanged write / erase characteristics, typical for the two-state devices, to cumulative doses exceeding 15 Mrad(Si).
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- Copyright © Materials Research Society 2005