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Time-Resolved Si Lattic-Temperature Measurement on Wide Time Scale (10−9–100 sec.) During Laser Annealing

Published online by Cambridge University Press:  22 February 2011

Kouichi Murakami ,
Hisayoshi Itoh ,
Yoshinori Tohmiya ,
Kōoki Takita  and
Kohzoh Masuda
Kouichi Murakami
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Hisayoshi Itoh
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Yoshinori Tohmiya
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Kōoki Takita
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Kohzoh Masuda
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
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Abstract

Time-resolved Si lattice-temperature measurement has been developed on wide time scale from 10−9 to 100 sec during laser annealing, by utilizing the time-dependent optical interference in Si on sappire. This interference is due to small changes in Si refractive index induced by temporal changes in Si lattice-temperature. For ns–pulsed laser annealing, part of the absorbed photon energy is found to be transferred into lattice (phonons) in a time much shorter than 40-ns pulse duration. A new method using a microscope is demonstrated for time- and space-resolved Si latticetemperature measurements during cw laser annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 167
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Lo, H.W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).Google Scholar
2.Murakami, K., Itoh, H., Takita, K. and Masuda, K., Phisica 117B&118B, 1024 (1983)Google Scholar
2a& Jpn. J. Appl. Phys. 20, L867 (1981).Google Scholar
3.Larson, B.C., White, C.W., Noggle, T.S. and Mills, D., Phys. Rev. Lett. 48, 337 (1982).Google Scholar
4.Lo, H.W. and Compaan, A., J. Appl. Phys. 51, 1565 (1980).Google Scholar
5.Sedgwick, T.O., Appl. Phys. Lett. 39, 254 (1981).Google Scholar
6.Murakami, K. and Masuda, K., in “Semiconductor Processes Probed by Ultrafast Laser Spectroscopy”, ed. Alfano, R.R. (Academic Press, to be published ).Google Scholar
7.Leamy, H.J., in “Laser and Electron-Beam Interactions with Solids”, p.459, eds. Appleton, B.R. and Celler, G.K. (North-Holland, N.Y., 1982).Google Scholar
8.Hopper, M.A., Clarke, R.A. and Young, L., Solid-State Science and Technology 122, 1216 (1975).Google Scholar
9.Olson, G.L., Kokorowski, S.A., Roth, J.A. and Hess, L.D., in “Laser-Solid Interactions and Transient Thermal Processing of Materials”, p.141, eds. Narayan, J., Brown, W.L. and Lemons, R.A. (North-Holland, N.Y., 1983).Google Scholar