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Time-Resolved Si Lattic-Temperature Measurement on Wide Time Scale (10−9–100 sec.) During Laser Annealing

Published online by Cambridge University Press:  22 February 2011

Kouichi Murakami
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Hisayoshi Itoh
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Yoshinori Tohmiya
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Kōoki Takita
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
Kohzoh Masuda
Affiliation:
Institute of Materials Science, University of Tsukuba, Sakura, Ibaraki 305, Japan
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Abstract

Time-resolved Si lattice-temperature measurement has been developed on wide time scale from 10−9 to 100 sec during laser annealing, by utilizing the time-dependent optical interference in Si on sappire. This interference is due to small changes in Si refractive index induced by temporal changes in Si lattice-temperature. For ns–pulsed laser annealing, part of the absorbed photon energy is found to be transferred into lattice (phonons) in a time much shorter than 40-ns pulse duration. A new method using a microscope is demonstrated for time- and space-resolved Si latticetemperature measurements during cw laser annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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Time-Resolved Si Lattic-Temperature Measurement on Wide Time Scale (10−9–100 sec.) During Laser Annealing
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