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Thermoelectric properties of synthesized Mg2Si0.95-xGe0.05Sbx by spark plasma sintering

Published online by Cambridge University Press:  16 March 2015

Asumi Sasaki
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo 125-8585, Japan
Koya Arai
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo 125-8585, Japan
Yuto Kimori
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo 125-8585, Japan
Tomoyuki Nakamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo 125-8585, Japan SWCC Showa Cable Systems Co., Ltd., LTD, 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara, Kanagawa, Japan
Kenjiro Fujimoto
Affiliation:
Department of Pure and Applied Chemistry, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan
Yuki Yamaguchi
Affiliation:
Department of Pure and Applied Chemistry, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan
Ryuji Tamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo 125-8585, Japan
Tsutomu Iida
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo 125-8585, Japan
Keishi Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo 125-8585, Japan
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Abstract

Magnesium silicide (Mg2Si) has attracted much interest as an n-type thermoelectric material because it is eco-friendly, non-toxic, light, and relatively abundant compared with other thermoelectric materials. In this study, we tried to improve the thermoelectric performance by doping Sb and Ge in the Mg2Si, as well as further optimizing x in the carrier concentration to cause phonon scattering. A high purity Mg2Si was synthesized from metal Mg and Sb doped Si-Ge alloy by using spark plasma sintering (SPS) equipment. The sintered samples were cut and polished. They were evaluated by using X-ray diffraction (XRD) and X-ray fluorescence (XRF) analyses. The carrier concentration of the samples was measured by using Hall measurement equipment. The electrical conductivity and Seebeck coefficient were measured by using a standard four-probe method in a He atmosphere. The thermal conductivity was measured by using a laser-flash system. We succeeded in obtaining a Sb doped Mg2Si0.95Ge0.05 sintered body easily without any impurities with the SPS equipment. The electrical conductivity of the sample was increased, and thermal conductivity was decreased by increasing the amount of doped Sb. The dimensionless figure of merit ZT became 0.74 at 733 K in the Mg2Si0.95-xGe0.05Sbx sample with x = 0.0022.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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