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A Thermodynamic Model for the Hydrogen Incorporation in PECVD Silicon Oxynitrides Thin Layers
Published online by Cambridge University Press: 22 February 2011
Abstract
In the PECVD SixNyHzOw the hydrogen is principally incorporated as N-H bonds. For O/(O+N) below 0.4, the %H is constant at 25%; from 0.4 to 1, it decreases to 4%. We show that a chemical ordered model is likely to describe the hydrogen incorporation in the amorphous network while a random bond model fails.
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- Copyright © Materials Research Society 1993