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Thermal Stabilttx of Hxdrogbnation Processes into Multicrystalline Silicon
Published online by Cambridge University Press: 03 September 2012
Abstract
We have compared, for multicrystalline silicon solar cells, the neutralization efficiency of low energy hydrogen ion implantation to those resulting from the deposition of hydrogenated silicon nitride and determined the optimal temperature in order to have the most important improvement of the bulk diffusion length LD.
In particular, the concentration profile of the introduced hydrogen has been determined by means of Elastic Recoil Detection (ERD) or nuclear reaction analysis and the electrical effects of the hydrogen investigated by the Surface PhotoVoltage (SPV) technique.
At least, the stability of the LD improvement after post-thermal treatments around 400°C and at higher temperatures has been studied for two annealing modes using a classical (15 min) or a rapid lamps furnace (25 sec).
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- Copyright © Materials Research Society 1992
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