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Thermal Stability of A1-Pt Thin Films/GaAs for Self-Aligning Gate Contacts
Published online by Cambridge University Press: 16 February 2011
Abstract
Several compositions of A1-Pt thin films have been co-evaporated on GaAs substrates to study the stability of the alloys at high-temperature anneals. The A1 concentration in the alloys ranges from 45 at.% to 70 at.%, and we show that the films meet thermal stability requirements imposed by GaAs selfaligning gate technology for compositions between AIPt and Al2Pt.
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- Copyright © Materials Research Society 1990